PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. = Very Tight Vce(on) distribution TM G IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use E in bridge configurations 2 Industry standard D Pak & TO-262 packages n-channel Lead-Free Benefits Generation 4 IGBT s offer highest efficiencies available IGBT s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT s . Minimized recovery characteristics require less/no snubbing 2 D Pak TO-262 Lower losses than MOSFET s conduction and IRG4BC10SD-S IRG4BC10SD-L Diode losses Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 14 C C I T = 100C Continuous Collector Current 8.0 C C I Pulsed Collector Current 18 A CM I Clamped Inductive Load Current 18 LM I T = 100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 18 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 38 D C P T = 100C Maximum Power Dissipation 15 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 3.3 JC R Junction-to-Case - Diode 7.0 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 80 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA Wt Weight 2.0(0.07) g (oz) www.irf.com 1 08/27/04IRG4BC10SD-S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.64 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.58 1.8 I = 8.0A V = 15V CE(on) C GE 2.05 V I = 14.0A See Fig. 2, 5 C 1.68 I = 8.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -9.5 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 3.65 5.48 S V = 100V, I =8.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I =4.0A See Fig. 13 FM C 1.4 1.7 I =4.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 15 22 I = 8.0A g C Qge Gate - Emitter Charge (turn-on) 2.42 3.6 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 6.53 9.8 V = 15V gc GE t Turn-On Delay Time 76 T = 25C d(on) J t Rise Time 32 ns I = 8.0A, V = 480V r C CC t Turn-Off Delay Time 815 1200 V = 15V, R = 100 d(off) GE G t Fall Time 720 1080 Energy losses includetai and f E Turn-On Switching Loss 0.31 diode reverse recovery. on E Turn-Off Switching Loss 3.28 mJ See Fig. 9, 10, 18 off E Total Switching Loss 3.60 10.9 ts E Total Switching Loss 1.46 2.6 mJ I = 5.0A ts C t Turn-On Delay Time 70 T = 150C, See Fig. 10,11, 18 d(on) J t Rise Time 36 ns I = 8.0A, V = 480V r C CC t Turn-Off Delay Time 890 V = 15V, R = 100 d(off) GE G t Fall Time 890 Energy losses includetai and f E Total Switching Loss 3.83 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 280 V = 0V ies GE C Output Capacitance 30 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 4.0 = 1.0MHz res t Diode Reverse Recovery Time 28 42 ns T = 25C See Fig. rr J 38 57 T = 125C 14 I =4.0A J F I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C See Fig. rr J 3.7 6.7 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 40 60 nC T = 25C See Fig. rr J 70 105 T = 125C 16 di/dt = 200A/s J di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C See Fig. (rec)M J During t 235 T = 125C 17 b J Details of note through are on the last page 2 www.irf.com