IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE Fast IGBT C Rugged: 10sec short circuit capable at V =15V GS Low V for 4 to 10kHz applications V = 600V CE(on) CES IGBT Co-packaged with ultra-soft-recovery antiparallel diode V = 1.85V CE(on) typ. 2 Industry standard D Pak package G Lead-Free V = 15V, I = 11A Benefits GE C E Offers highest efficiency and short circuit n-channel capability for intermediate applications Provides best efficiency for the mid range frequency (4 to 10kHz) Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives High noise immunePositive Onl gate drive- Negative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications 2 D Pak Compatible with high voltage Gate Driver IC s Allows simpler gate drive Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 18 C C I T = 100C Continuous Collector Current 11 C C I Pulsed Collector Current 36 A CM I Clamped Inductive Load Current 36 LM I T = 100C Diode Continuous Forward Current 7.0 F C t Short Circuit Withstand Time 10 s sc I Diode Maximum Forward Current 36 A FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 60 D C P T = 100C Maximum Power Dissipation 24 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT ------ ------ 2.1 JC R Junction-to-Case - Diode ------ ------ 2.5 C/W JC R Case-to-Sink, flat, greased surface ------ 0.50 ------ CS R Junction-to-Ambient, typical socket mount ----- ----- 80 JA Wt Weight ------ 2 (0.07) ------ g (oz) www.irf.com 1 01/19/10 Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage ---- 0.67 ---- V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage ---- 1.85 2.1 I = 11A V = 15V CE(on) C GE ---- 2.46 ---- V I = 18A See Fig. 2, 5 C ---- 2.07 ---- I = 11A, T = 150C C J V Gate Threshold Voltage 4.0 ---- 6.5 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 3.0 3.6 ---- S V = 100V, I = 11A fe CE C I Zero Gate Voltage Collector Current ---- ---- 250 A V = 0V, V = 600V CES GE CE ---- ---- 2500 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop ---- 1.4 1.7 V I = 8.0A See Fig. 13 FM C ---- 1.3 1.6 I = 8.0A, T = 150C C J I Gate-to-Emitter Leakage Current ---- ---- 100 nA V = 20V GES GE Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) ---- 39 59 I = 11A g C Qge Gate - Emitter Charge (turn-on) ---- 5.3 8.0 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) ---- 20 30 V = 15V gc GE t Turn-On Delay Time ---- 21 ---- T = 25C d(on) J t Rise Time ---- 37 ---- ns I = 11A, V = 480V r C CC t Turn-Off Delay Time ---- 463 690 V = 15V, R = 50 d(off) GE G t Fall Time ---- 340 510 Energy losses includetai and f E Turn-On Switching Loss ---- 0.41 ---- diode reverse recovery. on E Turn-Off Switching Loss ---- 2.03 ---- mJ See Fig. 9, 10, 11, 18 off E Total Switching Loss ---- 2.44 3.7 ts t Turn-On Delay Time ---- 19 ---- T = 150C, See Fig. 9, 10, 11, 18 d(on) J t Rise Time ---- 41 ---- ns I = 6.5A, V = 480V r C CC t Turn-Off Delay Time ---- 590 ---- V = 15V, R = 50 d(off) GE G t Fall Time ---- 600 ---- Energy losses includetai and f E Total Switching Loss ---- 3.49 ---- mJ diode reverse recovery. ts L Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package E C Input Capacitance ---- 460 ---- V = 0V ies GE C Output Capacitance ---- 54 ---- pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance ---- 14 ---- = 1.0MHz res t Diode Reverse Recovery Time ---- 37 55 ns T = 25C See Fig. rr J ---- 55 90 T = 125C 14 I = 8.0A J F I Diode Peak Reverse Recovery Current ---- 3.5 5.0 A T = 25C See Fig. rr J ---- 4.5 8.0 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge ---- 65 138 nC T = 25C See Fig. rr J ---- 124 360 T = 125C 16 di/dt 200A/s J di /dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/s T = 25C See Fig. (rec)M J During t ---- 210 ---- T = 125C 17 b J 2 www.irf.com