IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Extremely low voltage drop 1.4Vtyp. 10A V = 600V CES S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 V = 1.4V KHz in brushless DC drives. CE(on) typ. G Very Tight Vce(on) distribution TM IGBT co-packaged with HEXFRED ultrafast, V = 15V, I = 10A GE C E ultra-soft-recovery anti-parallel diodes for use in bridge configurations n-channel Industry standard TO-220AB package Lead-Free Generation 4 IGBT s offer highest efficiencies available IGBT s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT s . Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET s conduction and TO-220AB Diode losses Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 19 C C I T = 100C Continuous Collector Current 10 C C I Pulsed Collector Current 38 A CM I Clamped Inductive Load Current 38 LM I T = 100C Diode Continuous Forward Current 7.0 F C I Diode Maximum Forward Current 38 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 60 D C P T = 100C Maximum Power Dissipation 24 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 2.1 JC R Junction-to-Case - Diode 3.5 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 80 JA Wt Weight 2 (0.07) g (oz) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.40 1.6 I = 10A V = 15V CE(on) C GE 1.85 V I = 19A See Fig. 2, 5 C 1.44 I = 10A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 2.0 5.8 S V = 100V, I = 10A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1700 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.4 1.7 V I = 8.0A See Fig. 13 FM C 1.3 1.6 I = 8.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 27 40 I = 10A g C Qge Gate - Emitter Charge (turn-on) 4.3 6.5 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 10 15 V = 15V gc GE t Turn-On Delay Time 62 T = 25C d(on) J t Rise Time 32 ns I = 10A, V = 480V r C CC t Turn-Off Delay Time 690 1040 V = 15V, R = 50 d(off) GE G t Fall Time 480 730 Energy losses includetai and f E Turn-On Switching Loss 0.32 diode reverse recovery. on E Turn-Off Switching Loss 2.58 mJ See Fig. 9, 10, 11,18 off E Total Switching Loss 2.90 4.5 ts t Turn-On Delay Time 64 T = 150C, See Fig. 10,11, 18 d(on) J t Rise Time 35 ns I = 10A, V = 480V r C CC t Turn-Off Delay Time 980 V = 15V, R = 50 d(off) GE G t Fall Time 800 Energy losses includetai and f E Total Switching Loss 4.33 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 550 V = 0V ies GE C Output Capacitance 39 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.1 = 1.0MHz res t Diode Reverse Recovery Time 37 55 ns T = 25C See Fig. rr J 55 90 T = 125C 14 I = 8.0A J F I Diode Peak Reverse Recovery Current 3.5 5.0 A T = 25C See Fig. rr J 4.5 8.0 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 65 138 nC T = 25C See Fig. rr J 124 360 T = 125C 16 di/dt = 200As J di /dt Diode Peak Rate of Fall of Recovery 240 A/s T = 25C See Fig. (rec)M J During t 210 T = 125C 17 b J 2 www.irf.com