PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C UltraFast: Optimized for high operating frequencies V = 600V CES 8-40 kHz in hard switching, >200kHz in resonant mode Generation 4 IGBT design provides tighter para- V = 1.85V CE(on) typ. meter distribution and higher efficiency than G Generation 3 TM V = 15V, I = 6.5A GE C IGBT co-packaged with HEXFRED ultrafast, E ultra-soft-recovery anti-parallel diodes for use in N-channel bridge configurations 2 Industry standard D Pak package Lead-Free Benefits Generation 4 IGBTs offers highest efficiencies available Optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing 2 D Pak Designed to be adrop-i replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 13 C C I T = 100C Continuous Collector Current 6.5 C C I Pulsed Collector Current 52 A CM I Clamped Inductive Load Current 52 LM I T = 100C Diode Continuous Forward Current 7.0 F C I Diode Maximum Forward Current 52 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 60 W D C P T = 100C Maximum Power Dissipation 24 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.1 JC R Case-to-Sink, Flat, Greased Surface 0.5 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 1.44 g (oz) www.irf.com 1 IRG4BC20UD-SPbF Electrical Characteristics T = 25C (unless otherwise specified) J V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.69 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.85 2.1 I = 6.5A V = 15V CE(on) C GE 2.27 V I = 13A See Fig. 2, 5 C 1.87 I = 6.5A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 1.4 4.3 S V = 100V, I = 6.5A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1700 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.4 1.7 V I = 8.0A See Fig. 13 FM C 1.3 1.6 I = 8.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 27 41 I = 6.5A g C Qge Gate - Emitter Charge (turn-on) 4.5 6.8 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 10 16 V = 15V gc GE t Turn-On Delay Time 39 T = 25C d(on) J t Rise Time 15 ns I = 6.5A, V = 480V r C CC t Turn-Off Delay Time 93 140 V = 15V, R = 50 d(off) GE G t Fall Time 110 170 Energy losses includetai and f E Turn-On Switching Loss 0.16 diode reverse recovery. on E Turn-Off Switching Loss 0.13 mJ See Fig. 9, 10, 11, 18 off E Total Switching Loss 0.29 0.3 ts t Turn-On Delay Time 38 T = 150C, See Fig. 9, 10, 11, 18 d(on) J t Rise Time 17 ns I = 6.5A, V = 480V r C CC t Turn-Off Delay Time 100 V = 15V, R = 50 d(off) GE G t Fall Time 220 Energy losses includetai and f E Total Switching Loss 0.49 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 530 V = 0V ies GE C Output Capacitance 39 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.4 = 1.0MHz res t Diode Reverse Recovery Time 37 55 ns T = 25C See Fig. rr J 55 90 T = 125C 14 I = 8.0A J F I Diode Peak Reverse Recovery Current 3.5 5.0 A T = 25C See Fig. rr J 4.5 8.0 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 65 138 nC T = 25C See Fig. rr J 124 360 T = 125C 16 di/dt 200A/s J di /dt Diode Peak Rate of Fall of Recovery 240 A/s T = 25C See Fig. (rec)M J During t 210 T = 125C 17 b J 2 www.irf.com