IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE = G % & ( ) * + , E & ( + -./ 0 0 n-channel ) + & + (1 2 6 % & (3 + ) 0 *0 & (3 0 -./ & (3 4 ) + 0 5 ** TO-220AB Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 600 V V CES I T = 25C Continuous Collector Current 31 C C I T = 100C Continuous Collector Current 17 A C C Pulse Collector Current (Ref.Fig.C.T.5) 124 I CM Clamped Inductive Load current I 124 LM Diode Continuous Forward Current 8 I T = 100C F C I Diode Maximum Forward Current 16 FM V Gate-to-Emitter Voltage 20 V GE Maximum Power Dissipation 100 W P T = 25C D C P T = 100C Maximum Power Dissipation 42 D C T Operating Junction and -55 to +150 J Storage Temperature Range C T STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 1.2 C/W JC R Junction-to-Case- Diode 2.0 JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 80 JA Wt Weight 2.0 (0.07) g (oz.) www.irf.com 1 IRG4BC30FD1PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.69 V/C V = 0V, I = 1mA (BR)CES J GE C I = 17A V = 15V 1.59 1.8 C GE V Collector-to-Emitter Voltage 1.99 V I = 31A See Fig. 2, 5 CE(on) C 1.7 I = 17A, T = 150C C J V V = V , I = 250A Gate Threshold Voltage 3.0 6.0 V GE(th) CE GE C V /T Threshold Voltage temp. coefficient -11 mV/C V = V , I = 250A GE(th) J CE GE C 6.1 10 S V = 100V, I = 17A gfe Forward Transconductance CE C I V = 0V, V = 600V Zero Gate Voltage Collector Current 250 A CES GE CE 2500 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 2.0 2.4 V I = 8.0A See Fig. 13 FM F I = 8.0A, T = 150C 1.3 1.8 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 17A Total Gate Charge (turn-on) 57 62 g C Q Gate-to-Emitter Charge (turn-on) 10 12 nC V = 400V See Fig. 8 ge CC Q V = 15V gc Gate-to-Collector Charge (turn-on) 21 24 GE t Turn-On delay time 22 T = 25C d(on) J t Rise time 24 ns I = 17A, V = 480V r C CC t Turn-Off delay time 250 320 V = 15V, R = 23 d(off) GE G t Fall time 160 210 Energy losses inlcudetai and f E Turn-On Switching Loss 370 diode reverse recovery. on E Turn-Off Switching Loss 1420 J See Fig. 9, 10, 11, 18 off E Total Switching Loss 1800 2290 ts t Turn-On delay time 21 T = 150C See Fig. 9,10,11,18 d(on) J t I = 17A, V = 480V Rise time 25 ns r C CC t Turn-Off delay time 400 V = 15V, R = 23 d(off) GE G t Fall time 340 Energy losses inlcudetai and f E Total Switching Loss 3280 J diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C V = 0V Input Capacitance 1170 ies GE C Output Capacitance 100 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 11 f = 1.0MHz res t Diode Reverse Recovery Time 46 61 ns T = 25C See Fig. rr J 85 93 T = 125C 14 I = 12A J F I Diode Peak Reverse Recovery Current 4.8 6.5 A T = 25C See Fig. rr J T = 125C 8.5 10 15 V = 200V J R Q T = 25C Diode Reverse Recovery Charge 110 190 nC See Fig. rr J T = 125C 410 550 16 di/dt 200A/s J /dt T = 25C di Diode Peak Rate of Fall of Recovery 260 A/s See Fig. (rec)M J During t T = 125C 270 17 b J 2 www.irf.com