PD-95891A IRG4BH20K-SPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, V = 1200V CES t =10s V = 720V , T = 125C, CC sc J V = 15V GE Combines low conduction losses with high V = 3.17V CE(on) typ. G switching speed Latest generation design provides tighter parameter V = 15V, I = 5.0A GE C E distribution and higher efficiency than previous generations n-channel 2 Industry standard D Pak package Lead-Free Benefits As a Freewheeling Diode we recommend our TM HEXFRED ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBT s offer highest power 2 D Pak density motor controls possible Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 11 C C I T = 100C Continuous Collector Current 5.0 C C I Pulsed Collector Current 22 A CM I Clamped Inductive Load Current 22 LM t Short Circuit Withstand Time 10 s sc V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 130 mJ ARV P T = 25C Maximum Power Dissipation 60 D C P T = 100C Maximum Power Dissipation 24 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.1 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 01/21/2010IRG4BH20K-SPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V / T Temperature Coeff. of Breakdown Voltage 1.13 V/C V = 0V, I = 2.5mA (BR)CES J GE C 3.17 4.3 I = 5.0A V = 15V C GE V Collector-to-Emitter Saturation Voltage 4.04 I = 11A See Fig.2, 5 CE(ON) C 2.84 I = 5.0A , T = 150C C J V Gate Threshold Voltage 3.5 6.5 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 1mA GE(th) J CE GE C g Forward Transconductance 2.3 3.5 S V = 100 V, I = 5.0A fe CE C 250 V = 0V, V = 1200V GE CE I Zero Gate Voltage Collector Current CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 28 43 I = 5.0A g C Q Gate - Emitter Charge (turn-on) 4.4 6.6 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 12 18 V = 15V gc GE t Turn-On Delay Time 23 d(on) t Rise Time 26 T = 25C r J t Turn-Off Delay Time 93 140 I =5.0A, V = 960V d(off) C CC t Fall Time 270 400 V = 15V, R = 50 f GE G E Turn-On Switching Loss 0.45 Energy losses includetai on E Turn-Off Switching Loss 0.44 mJ See Fig. 9,10,14 off E Total Switching Loss 0.89 1.2 ts t Short Circuit Withstand Time 10 s V = 720V, T = 125C sc CC J V = 15V, R = 50 GE G t Turn-On Delay Time 23 T = 150C, d(on) J t Rise Time 28 I = 5.0A, V = 960V r C CC t Turn-Off Delay Time 100 V = 15V, R = 50 d(off) GE G t Fall Time 620 Energy losses includetai f E Total Switching Loss 1.7 mJ See Fig. 10,11,14 ts L Internal Emitter Inductance 7.5 nH Between lead and center of die contact E C Input Capacitance 435 V = 0V ies GE C Output Capacitance 44 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 8.3 = 1.0MHz res Repetitive rating pulse width limited by maximum Repetitive rating V = 20V, pulse width limited by GE junction temperature. max. junction temperature. ( See fig. 13b ) V = 80%(V ), V = 20V, L = 10H, R =50 CC CES GE G (See fig. 13a) Pulse width 5.0s, single shot. * When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com