PD - 95603B IRG4IBC10UDPbF UltraFast Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in = resonant mode Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than previous generation E IGBT co-packaged with HEXFRED ultrafast, ultra- soft recovery anti-parallel diodes for use in bridge n-channel configurations Industry standard TO-220 Full-Pak Lead-Free Benefits Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specifica application conditions HEXFRED diodes optimized for performace with IGBTs Minimized recovery characteristics require less/no snubbing TO-220AB Absolute Maximum Ratings Max. Parameter Units V Collector-toEmitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current, V 15V 6.8 A C C GE I T = 100C Continuous Collector, V 15V 3.9 C C GE I Pulsed Collector Current 27 CM I Clamped Inductive Load Current 27 LM I Tc = 100C Diode Continuous Forward Current 3.9 F I 27 Diode Maximum Forward Current FM V rms Isolated Voltage, Terminal to case, t=1min 2500 V ISOL V 20 Gate-to-Emitter Voltage GE P T = 25C Power Dissipation 25 W D C P T = 100C 10 Power Dissipation D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature for 10 seconds 300 (0.063 in.) (1.6mm from case) 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 5.0 JC R Junction-to-Case - Diode 9.0 C/W JC R Junction-to-Ambient, typical socket mount 65 JA Wt Weight 2.1 (0.075) g (oz) www.irf.com 1 IRG4IB10UDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A V Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE CE V / T V = 0V, I = 1.0mA Breakdown Voltage Temp. Coefficient 0.54 V/C (BR)CES J GE CE V = 15V, I = 5.0A 2.15 2.6 GE CE V V = 15V, I = 8.5A Collector-to-Emitter Saturation Voltage 2.61 V CE(on) GE CE V = 15V, I = 5.0A, T = 150C 2.30 GE CE J V V = V , I = 250A Gate Threshold Voltage 3.0 6.0 V GE(th) CE GE CE V / T Gate Threshold Voltage Coefficient -8.7 mV/C GE(th) J V = 100V, I = 5.0A g Forward Transconductance 2.8 4.2 S fe CE CE I V = 600V, V = 0V Collector-to-Emitter Leakage Current 250 A CE GE CES V = 600V, V = 0V, T = 150C 1000 CE GE J V I = 4.0A Diode Forward Voltage Drop 1.5 1.8 V FM C I = 4.0A, T = 125C 1.4 1.7 C J I V = 20V Gate-to-Emitter Forward Leakage 100 nA GES GE V = -20V Gate-to-Emitter Reverse Leakage -100 GE Switching Characteristics T = 25C (unless otherwise specified) J Q V = 400V Total Gate Charge (turn-on) 15 22 CE g I = 5.0A Q Gate-to-Emitter Charge (turn-on) 2.6 4.0 nC ge C Q V = 15V, See Fig. 8 Gate-to-Collector Charge 5.8 8.7 gc GE t Turn-On delay time 40 d(on) t I = 5.0A, V = 480V Rise time 16 ns r C CC t Turn-Off delay time 87 130 V = 15V, R = 100 d(off) GE G t T = 25C Fall time 140 210 f J E Turn-On Switching Loss 0.14 Energy losses includetai and (on) E Turn-Off Switching Loss 0.12 mJ diode reverse recovery. (off) E See Fig. 9, 10, 18 Total Switching Loss 0.26 0.33 ts t Turn-On delay time 38 I = 5.0A, V = 480V See Fig. 11, 18 d(on) C CC t Rise time 18 ns V = 15V, R = 100 r GE G t Turn-Off delay time 95 T = 150C d(off) J t Fall time 250 Energy losses includetai and f E Total Switching Loss 0.45 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C V = 0V Input Capacitance 270 GE ies V = 30V C Output Capacitance 21 pF CE oes C = 1.0MHz, See Fig. 7 Reverse Transfer Capacitance 3.5 res t Diode Reverse Recovery Time 28 42 ns T =25C, See Fig. I =4.0A, V =200V rr J F R T =125C 38 57 14 di/dt=200A/s J I Diode Peak Reverse Recovery Current 2.9 5.2 A T =25C, See Fig. I =4.0A, V =200V rr J F R T =125C 3.7 6.7 15 di/dt=200A/s J Q T =25C, I =4.0A, V =200V Diode Reverse Recovery Charge 40 60 nC See Fig. rr J F R 70 105 T =125C 16 di/dt=200A/s J di /dt T =25C, I =4.0A, V =200V Diode Peak Rate of Fall of Recovery 280 A/s See Fig. (rec)M J F R During t T =125C 235 17 di/dt=200A/s b J 2 www.irf.com