PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation V = 600V CES voltage and low operating freqencies (<1 kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than V = 1.4V CE(on) typ. G previous generation Industry standard TO-220 Full-Pak V = 15V, I = 18A E GE C Lead-Free N-channel Benefits Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions Designed to be a drop-i replacement for equivalent industry -standard Generation 3 IR IGBTs TO-220 Full-Pak Absolute Maximum Ratings V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 23.5 C C I T = 100C Continuous Collector Current 13.0 A C C I Pulsed Collector Current 47 CM I Clamped Inductive Load Current 47 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 10 mJ ARV P T = 25C Maximum Power Dissipation 45 D C P T = 100C Maximum Power Dissipation 18 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.8 JC C/W R Junction-to-Ambient, typical socket mount 65 JA Wt Weight 2.1 (0.075) g (oz) www.irf.com 1 06/17/2010IRG4IBC30SPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V / T Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1.0mA (BR)CES J GE C 1.40 1.6 I = 18A V = 15V C GE V Collector-to-Emitter Saturation Voltage 1.84 I = 34A See Fig.2, 5 CE(ON) C 1.45 I = 18A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 6.0 11 S V = 100 V, I = 18A fe CE C 250 V = 0V, V = 600V GE CE 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 75 I = 18A g C Q Gate - Emitter Charge (turn-on) 7.3 11 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 17 26 V = 15V gc GE t Turn-On Delay Time 22 d(on) t Rise Time 18 T = 25C r J t Turn-Off Delay Time 540 810 I = 18A, V = 480V d(off) C CC t Fall Time 390 590 V = 15V, R = 23 f GE G E Turn-On Switching Loss 0.26 Energy losses includetai on E Turn-Off Switching Loss 3.45 mJ See Fig. 9, 10, 14 off E Total Switching Loss 3.71 5.6 ts t Turn-On Delay Time 21 T = 150C, d(on) J t Rise Time 19 I = 18A, V = 480V r C CC t Turn-Off Delay Time 790 V = 15V, R = 23 d(off) GE G t Fall Time 760 Energy losses includetai f E Total Switching Loss 6.55 mJ See Fig. 10, 11, 14 ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 1100 V = 0V ies GE C Output Capacitance 72 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 19 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by Pulse width 80s duty factor 0.1%. GE max. junction temperature. (See Fig. 13b) Pulse width 5.0s, single shot. V = 80%(V ), V = 20V, L = 10H, R = 23 CC CES GE G (See Fig. 13a) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com