PD -95171 IRG4PC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation V = 600V CES voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than V = 1.32V CE(on) typ. G Generation 3 Industry standard TO-247AC package V = 15V, I = 31A E GE C Lead-Free n-channel Benefits Generation 4 IGBT s offer highest efficiency available IGBT s optimized for specified application conditions Designed to be adrop-i replacement for equivalent industry-standard Generation 3 IR IGBT s TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 31 A C C I Pulsed Collector Current 120 CM I Clamped Inductive Load Current 120 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 15 mJ ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.77 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 04/23/04IRG4PC40SPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1.0mA (BR)CES J GE C 1.32 1.5 I = 31A V = 15V C GE V Collector-to-Emitter Saturation Voltage 1.68 I = 60A See Fig.2, 5 CE(ON) C V 1.32 I = 31A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -9.3 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 12 21 S V = 100V, I = 31A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 100 150 I = 31A g C Q Gate - Emitter Charge (turn-on) 14 21 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 34 51 V = 15V gc GE t Turn-On Delay Time 22 d(on) t Rise Time 18 T = 25C r J ns t Turn-Off Delay Time 650 980 I = 31A, V = 480V d(off) C CC t Fall Time 380 570 V = 15V, R = 10 f GE G E Turn-On Switching Loss 0.45 Energy losses includetai on E Turn-Off Switching Loss 6.5 mJ See Fig. 10, 11, 13, 14 off E Total Switching Loss 6.95 9.9 ts t Turn-On Delay Time 23 T = 150C, d(on) J t Rise Time 21 I = 31A, V = 480V r C CC ns t Turn-Off Delay Time 1000 V = 15V, R = 10 d(off) GE G t Fall Time 940 Energy losses includetai f E Total Switching Loss 12 mJ See Fig. 13, 14 ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 2200 V = 0V ies GE C Output Capacitance 140 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 26 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by Pulse width 80s duty factor 0.1%. GE max. junction temperature. ( See fig. 13b ) Pulse width 5.0s, single shot. V = 80%(V ), V = 20V, L = 10H, R = 10, CC CES GE G (See fig. 13a) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com