PD-95184 IRG4PC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating V = 600V CES frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter V = 1.72V CE(on) typ. G parameter distribution and higher efficiency than Generation 3 V = 15V, I = 20A E GE C Industry standard TO-247AC package n-channel Lead-Free Benefits Generation 4 IGBT s offer highest efficiency available IGBT s optimized for specified application conditions Designed to be adrop-i replacement for equivalent industry-standard Generation 3 IR IGBT s TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 40 C C I T = 100C Continuous Collector Current 20 A C C I Pulsed Collector Current 160 CM I Clamped Inductive Load Current 160 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 15 mJ ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case ------ ------ 0.77 JC R Case-to-Sink, flat, greased surface ------ 0.24 ------ C/W CS R Junction-to-Ambient, typical socket mount ------ ------ 40 JA Wt Weight ------ 6 (0.21) ------ g (oz) www.irf.com 1 04/23/04IRG4PC40UPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 ---- ---- V V = 0V, I = 1.0A (BR)ECS GE C See Fig. 2, 5 V /T Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 I = 20A V = 15V CE(on) C GE ---- 2.15 ---- V I = 40A C ---- 1.7 ---- I = 20A, T = 150C C J V Gate Threshold Voltage 3.0 ---- 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 11 18 ---- S V = 100V, I = 20A fe CE C ---- ---- 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current ---- ---- 2.0 A V = 0V, V = 10V, T = 25C CES GE CE J ---- ---- 2500 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current ---- ---- 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) ---- 100 150 I = 20A g C Q Gate - Emitter Charge (turn-on) ---- 16 25 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) ---- 40 60 V = 15V gc GE t Turn-On Delay Time ---- 34 ---- T = 25C d(on) J t Rise Time ---- 19 ---- ns I = 20A, V = 480V r C CC t Turn-Off Delay Time ---- 110 175 V = 15V, R = 10 d(off) GE G t Fall Time ---- 120 180 Energy losses includetai f E Turn-On Switching Loss ---- 0.32 ---- on E Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14 off E Total Switching Loss ---- 0.67 1.0 ts t Turn-On Delay Time ---- 30 ---- T = 150C, d(on) J t Rise Time ---- 19 ---- ns I = 20A, V = 480V r C CC t Turn-Off Delay Time ---- 220 ---- V = 15V, R = 10 d(off) GE G t Fall Time ---- 160 ---- Energy losses includetai f E Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14 ts L Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package E C Input Capacitance ---- 2100 ---- V = 0V ies GE C Output Capacitance ---- 140 ---- pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance ---- 34 ---- = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE Pulse width 80s duty factor 0.1%. max. junction temperature. ( See fig. 13b ) Pulse width 5.0s, single shot. V = 80%(V ), V = 20V, L = 10H, R = 10, CC CES GE G (See fig. 13a) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com