PD -95183 IRG4PC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) V = 600V CES applications Industry-benchmark switching losses improve efficiency of all power supply topologies V = 2.05V CE(on) typ. G 50% reduction of Eoff parameter Low IGBT conduction losses V = 15V, I = 20A E GE C Latest-generation IGBT design and constructionoffers n-channel tighter parameters distribution, exceptional reliability Lead-Free Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz hard switche mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 40 C C I T = 100C Continuous Collector Current 20 A C C I Pulsed Collector Current 160 CM I Clamped Inductive Load Current 160 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 160 mJ ARV P T = 25C Maximum Power Dissipation 160 D C W P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.77 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 04/23/04IRG4PC40WPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.44 V/C V = 0V, I = 1.0mA (BR)CES J GE C 2.05 2.5 I = 20A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.36 I = 40A See Fig.2, 5 C CE(ON) V 1.90 I = 20A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage 13 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 18 28 S V = 100 V, I =20A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 2500 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 98 147 I = 20A g C Q Gate - Emitter Charge (turn-on) 12 18 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 36 54 V = 15V gc GE t Turn-On Delay Time 27 d(on) t Rise Time 22 T = 25C r J ns t Turn-Off Delay Time 100 150 I = 20A, V = 480V d(off) C CC t Fall Time 74 110 V = 15V, R = 10 f GE G E Turn-On Switching Loss 0.11 Energy losses includetai on E Turn-Off Switching Loss 0.23 mJ See Fig. 9,10, 14 off E Total Switching Loss 0.34 0.45 ts t Turn-On Delay Time 25 T = 150C, d(on) J t Rise Time 23 I = 20A, V = 480V r C CC ns t Turn-Off Delay Time 170 V = 15V, R = 10 d(off) GE G t Fall Time 124 Energy losses includetai f E Total Switching Loss 0.85 mJ See Fig.10,11, 14 ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 1900 V = 0V ies GE C Output Capacitance 140 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 35 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) Pulse width 80s duty factor 0.1%. V = 80%(V ), V = 20V, L = 10H, R = 10, CC CES GE G (See fig. 13a) Pulse width 5.0s, single shot. Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com