PD 91471B
IRG4PC50UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
FeaturesFeaturesFeatures
FeaturesFeatures
UltraFast: Optimized for high operating
V = 600V
CES
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
V = 1.65V
CE(on) typ.
Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3 @V = 15V, I = 27A
GE C
E
TM
IGBT co-packaged with HEXFRED ultrafast,
n-channel
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be adrop-i replacement for equivalent
TO-247AC
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V Collector-to-Emitter Voltage 600 V
CES
I @ T = 25C Continuous Collector Current 55
C C
I @ T = 100C Continuous Collector Current 27
C C
I Pulsed Collector Current 220 A
CM
I Clamped Inductive Load Current 220
LM
I @ T = 100C Diode Continuous Forward Current 25
F C
I Diode Maximum Forward Current 220
FM
V Gate-to-Emitter Voltage 20 V
GE
P @ T = 25C Maximum Power Dissipation 200
D C
W
P @ T = 100C Maximum Power Dissipation 78
D C
T Operating Junction and -55 to +150
J
T Storage Temperature Range C
STG
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
Thermal Resistance
Parameter Min. Typ. Max. Units
R Junction-to-Case - IGBT ------ ------ 0.64
JC
R Junction-to-Case - Diode ------ ------ 0.83 C/W
JC
R Case-to-Sink, flat, greased surface ------ 0.24 ------
CS
R Junction-to-Ambient, typical socket mount ----- ----- 40
JA
Wt Weight ------ 6 (0.21) ------ g (oz)
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12/30/00IRG4PC50UD
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V = 0V, I = 250A
(BR)CES GE C
V / T Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/CV = 0V, I = 1.0mA
(BR)CES J
GE C
V Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 I = 27A V = 15V
CE(on) C GE
---- 2.0 ---- V I = 55A See Fig. 2, 5
C
---- 1.6 ---- I = 27A, T = 150C
C J
V Gate Threshold Voltage 3.0 ---- 6.0 V = V , I = 250A
GE(th) CE GE C
V / T Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/CV = V , I = 250A
GE(th) J CE GE C
g Forward Transconductance 16 24 ---- S V = 100V, I = 27A
fe CE C
I Zero Gate Voltage Collector Current ---- ---- 250 A V = 0V, V = 600V
CES GE CE
---- ---- 6500 V = 0V, V = 600V, T = 150C
GE CE J
V Diode Forward Voltage Drop ---- 1.3 1.7 V I = 25A See Fig. 13
FM C
---- 1.2 1.5 I = 25A, T = 150C
C J
I Gate-to-Emitter Leakage Current ---- ---- 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) ---- 180 270 I = 27A
g C
Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC V = 400V See Fig. 8
CC
Q Gate - Collector Charge (turn-on) ---- 61 90 V = 15V
gc GE
t Turn-On Delay Time ---- 46 ---- T = 25C
d(on) J
t Rise Time ---- 25 ---- ns I = 27A, V = 480V
r C CC
t Turn-Off Delay Time ---- 140 230 V = 15V, R = 5.0
d(off) GE G
t Fall Time ---- 74 110 Energy losses includetai and
f
E Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery.
on
E Turn-Off Switching Loss ---- 0.59 ---- mJ See Fig. 9, 10, 11, 18
off
E Total Switching Loss ---- 1.58 1.9
ts
t Turn-On Delay Time ---- 44 ---- T = 150C, See Fig. 9, 10, 11, 18
d(on) J
t Rise Time ---- 27 ---- ns I = 27A, V = 480V
r C CC
t Turn-Off Delay Time ---- 240 ---- V = 15V, R = 5.0
d(off) GE G
t Fall Time ---- 130 ---- Energy losses includetai and
f
E Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery.
ts
L Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
E
C Input Capacitance ---- 4000 ---- V = 0V
ies GE
C Output Capacitance ---- 250 ---- pF V = 30V See Fig. 7
oes CC
C Reverse Transfer Capacitance ---- 52 ---- = 1.0MHz
res
t Diode Reverse Recovery Time ---- 50 75 ns T = 25C See Fig.
rr J
---- 105 160 T = 125C 14 I = 25A
J F
I Diode Peak Reverse Recovery Current ---- 4.5 10 A T = 25C See Fig.
rr J
---- 8.0 15 T = 125C 15 V = 200V
J R
Q Diode Reverse Recovery Charge ---- 112 375 nC T = 25C See Fig.
rr J
---- 420 1200 T = 125C 16 di/dt 200A/s
J
di /dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/s T = 25C
(rec)M J
During t ---- 160 ---- T = 125C
b J
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