PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter = G parameter distribution and higher efficiency. Industry standard TO-247AC package. E Lead-Free n-channel Benefits Generation 4 IGBT s offer highest efficiency available. IGBT s optimized for specified application conditions. Designed for best performance when used with IR Hexfred & IR Fred companion diodes. TO-247AC + , - . + & + / 0 1 2 3 43 / 0 1 2 ( / 5 6 / / 7 8 6 + , + 9 + , 7 + 7 % , 5 0 1 2 3 : 5 . < 3 5 0 1 2 ( : 5 . < ( 1 = 33 > (3 1 1 1 ( 6 &6 ( & ) : & 6 :6 . ( ( (A ) % & () *) www.irf.com 1 IRG4PC60UPb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www.irf.com