2% 34 53 Features C % & = G ( )*+% E , - n-channel . & & . % / 0 & 1 .. 0 & (& TO-247AD 6 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 41 A C C I T = 100C Continuous Collector Current 21 C C Pulse Collector Current 82 I CM Clamped Inductive Load current I 82 LM Diode Continuous Forward Current 10 I Tc = 100C F I Diode Maximum Forward Current 40 FM V Gate-to-Emitter Voltage 20 V GE Maximum Power Dissipation 160 W P T = 25C D C P T = 100C Maximum Power Dissipation 65 D C T Operating Junction and -55 to +150 J Storage Temperature Range C T STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 0.77 C/W JC Junction-to-Case- Diode 2.5 R JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz.) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage V 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage V = 0V, I = 1mA (BR)CES J 0.43 V/C GE C 2.43 3.1 V I = 21A V = 15V C GE V I = 41A Collector-to-Emitter Saturation Voltage 2.97 See Fig.2, 5 CE(on) C 2.47 I = 21A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T V = V , I = 250A Threshold Voltage temp. coefficient -11 mV/C GE(th) J CE GE C 16 24 S V = 100V, I = 21A gfe Forward Transconductance CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 1200V CES GE CE V = 0V, V = 1200V, T = 150C 5000 GE CE J V Diode Forward Voltage Drop 3.4 3.8 V I = 10A See Fig.13 FM F I = 10A, T = 150C 3.3 3.7 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 21A Total Gate Charge (turn-on) 100 150 g C Q Gate-to-Emitter Charge (turn-on) 18 24 nC V = 400V See Fig.8 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 34 50 gc GE t Turn-On delay time 22 d(on) t Rise time 26 ns I = 21A, V = 800V r C CC t V = 15V, R = 10 Turn-Off delay time 100 140 d(off) GE G t Fall time 200 300 Energy losses includetai and f E Turn-On Switching Loss 1950 diode reverse recovery. on E Turn-Off Switching Loss 1710 J See Fig. 9, 10, 11, 18 off E Total Switching Loss 3660 4490 tot t Turn-On delay time 21 T = 150C, See Fig. 9, 10, 11, 18 d(on) J t I = 21A, V = 800V Rise time 25 ns r C CC t Turn-Off delay time 220 V = 15V, R = 10 d(off) GE G t Fall time 380 Energy losses includetai and f E Total Switching Loss 6220 J diode reverse recovery. TS L Internal Emitter Inductance 13 nH Measured 5mm from package E C V = 0V Input Capacitance 2100 ies GE C Output Capacitance 99 pF V = 30V, See Fig.7 oes CC C Reverse Transfer Capacitance 12 f = 1.0MHz res t T =25C See Fig Diode Reverse Recovery Time 50 76 ns J rr 72 110 T =125C 14 I = 8.0A J F T =25C See Fig I Diode Peak Reverse Recovery Current 4.4 7.0 A J rr 5.9 8.8 T =125C 15 V = 200V J R T =25C See Fig Q Diode Reverse Recovery Charge 130 200 nC J rr T =125C 16 250 380 J di/dt = 200A/s di /dt T =25C See Fig (rec)M Diode Peak Rate of Fall of Recovery 210 A/s J T =125C 17 During t 180 J b 2 www.irf.com