X-On Electronics has gained recognition as a prominent supplier of IRG4PH40U-E IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRG4PH40U-E IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRG4PH40U-E Infineon

IRG4PH40U-E electronic component of Infineon
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Part No.IRG4PH40U-E
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC
Datasheet: IRG4PH40U-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 3.3145 ea
Line Total: USD 36.46 
Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 11
Multiples : 1
11 : USD 3.3145
25 : USD 2.8601
100 : USD 1.5771
500 : USD 1.5637
1000 : USD 1.537
2500 : USD 1.4969

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Brand
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We are delighted to provide the IRG4PH40U-E from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG4PH40U-E and other electronic components in the IGBT Transistors category and beyond.

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Data Sheet No.PD 60158-H IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) R 80m (max) ds(on) Active clamp E.S.D protection V 50V clamp Status feedback Open load detection I Limit 10A Logic ground isolated from power ground V 3V open load Description The IPS521/IPS521S are fully protected five terminal Truth Table high side switches with built in short-circuit , over- temperature, ESD protection, inductive load capability In Op. Conditions Out Dg and diagnostic feedback. The output current is con- Normal H H H trolled when it reaches I value. The current lim L limitation is activated until the thermal protection Normal L L acts. The over-temperature protection turns off the H Open load H H high side switch if the junction temperature exceeds Open load L H H Tshutdown. It will automatically restart after the junc- o H tion has cooled 7 C below Tshutdown. A diagnostic Over current L (limiting) L pin is provided for status feedback of short-circuit, L Over current L L over-temperature and open load detection. The double Over-temperature H L (cycling) L level shifter circuitry allows large offsets between the Over-temperature L L logic ground and the load ground. L Typical Connection Packages + VCC + 5v Output pull-up resistor 15K Status Vcc feedback Dg control Logic 5 Lead Rdg Out D2Pak (SMD220) IPS521S Rin In Gnd Load Logic signal Logic Gnd Load Gnd 5 Lead TO220 - IPS521 www.irf.com 1IPS521/IPS521S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters o are referenced to GROUND lead. (T = 25 C unless otherwise specified). j Symbol Parameter Min. Max. Units Test Conditions V Maximum output voltage V -50 V +0.3 cc cc out V Maximum logic ground to load ground offset V -50 V +0.3 cc cc V offset V Maximum Input voltage -0.3 7 in I Maximum positive IN current -5 10 mA in, max V Maximum diagnostic output voltage -0.3 7 V dg I Maximum diagnostic output current -1 10 mA dg, max (1) I Diode max. permanent current sd cont. o (rth=62 C/W) 2.2 A (1) I Diode max. pulsed current 10 sd pulsed ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H (1) P d Maximum power dissipation o (TC=25 C) IPS521 40 W o (TC=25 C) IPS521S 1.56 T max. Max. storage & operating junction temp. -40 +150 j o C T Lead temperature (soldering 10 seconds) 300 lead Vcc max. Maximum Vcc voltage 50 V Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions  R 1 Thermal resistance junction to case th TO-220  R 2 Thermal resistance junction ambient th o R 1 Thermal resistance with standard footprint 60 th C/W 2 D PAK (SMD220) R 2 Thermal resistance with 1" square footprint 35 th R 3 Thermal resistance junction to case  th (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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