X-On Electronics has gained recognition as a prominent supplier of IRG4PH50KDPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRG4PH50KDPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRG4PH50KDPBF Infineon

Name: IRG4PH50KDPBF
Brand: Infineon
SKU: IRG4PH50KDPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRG4PH50KDPBF electronic component of Infineon

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Part No.	IRG4PH50KDPBF
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	International Rectifier IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
Datasheet:	IRG4PH50KDPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRG4PH50KDPBF More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 2 Multiples : 2	2 : USD 6.8785 75 : USD 6.075	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 18.3704 10 : USD 16.2313 25 : USD 14.9263 100 : USD 13.401	N/A Obsolete

0 MOQ : 4000 Multiples : 4000	4000 : USD 5.8105 5200 : USD 5.3791	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 8.6287 2 : USD 5.6808 5 : USD 5.4216	N/A Obsolete

0 MOQ : 25 Multiples : 25	25 : USD 3.4294	N/A Obsolete

We are delighted to provide the IRG4PH50KDPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG4PH50KDPBF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

Infineon's IRG4PH50KDPBF is an International Rectifier IGBT Transistor with 1200V ULTRAFAST 4-20 kHz COPACK IGBT technology. It is a three-terminal, insulated-gate field effect power transistor ideal for low frequency switching applications like motor drives, power supplies, and AC inverter drives. The IGBT features a -Vce(sat) of <1.4V, a collector current of 50A, and a maximum junction temperature of 150°C. It also has a high peak current rating of 700A and a diode forward current of 110A. In addition, this IGBT transistor is RoHS compliant. The package is a DirectPAC COPACK, consisting of a power transistor and a fast, ultra-soft, sixth-generation diode.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.2 kV 1.2 kV
Collector-Emitter Saturation Voltage 3.5 V 3.5 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 45 A 45 A
Power Dissipation 200 W 200 W
Package / Case TO - 247 TO - 247
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 200 W 200 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Continuous Collector Current Ic Max 45 A 45 A
Brand Infineon Infineon
Factory Pack Quantity : 25 25
Height 20.3 mm 20.3 mm
Length 15.9 mm 15.9 mm
Width 5.3 mm 5.3 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000
Brand Category Infineon Infineon