PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard: Optimized for minimum saturation V =1200V voltage and low operating frequencies ( < 1kHz) CES Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than V = 1.47V CE(on) typ. G Generation 3 Industry standard TO-247AC package V = 15V, I = 33A E GE C Lead-Free n-channel Benefits C Generation 4 IGBT s offer highest efficiency available IGBT s optimized for specified application conditions Designed to be adrop-i replacement for equivalent industry-standard Generation 3 IR IGBT s E C G TO-247AD IRG4PH50S-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 57 C C I T = 100C Continuous Collector Current 33 C C A Pulsed Collector Current I 114 CM Clamped Inductive Load Current I 114 LM 20 Gate-to-Emitter Voltage V V GE Transient Gate-to-Emitter Voltage 30 Reverse Voltage Avalanche Energy E 270 mJ ARV 200 P T =25 Maximum Power Dissipation D C W P T =100 Maximum Power Dissipation 80 D C T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case 0.64 JC C/W R Case-to-Sink, Flat, Greased Surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6.0(0.21) g (oz) www.irf.com 1 02/09/09IRG4PH50S-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0 A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 1.22 V/C V = 0V, I = 2.0 mA (BR)CES J GE C 1.47 1.7 I = 33A V = 15V C GE V Collector-to-Emitter Saturation Voltage 1.75 I = 57A See Fig.2, 5 C CE(ON) 1.55 I = 33A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C DV /DT Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 27 40 S V = 100V, I = 33A fe CE C 250 V = 0V, V = 1200V GE CE 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 167 251 I = 33A g C Q Gate - Emitter Charge (turn-on) 25 38 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 55 83 V = 15V gc GE t Turn-On Delay Time 32 d(on) t Rise Time 29 T = 25C r J t Turn-Off Delay Time 845 1268 I = 33A, V = 960V d(off) C CC t Fall Time 425 638 V = 15V, R = 5.0 f GE G E Turn-On Switching Loss 1.80 Energy losses includetai on E Turn-Off Switching Loss 19.6 mJ See Fig. 9, 10, 14 off E Total Switching Loss 21.4 44 ts t Turn-On Delay Time 32 T = 150C, d(on) J t Rise Time 30 I = 33A, V = 960V r C CC t Turn-Off Delay Time 1170 V = 15V, R = 5.0 d(off) GE G t Fall Time 1000 Energy losses includetai f E Total Switching Loss 37 mJ See Fig. 10,11,14 ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 3600 V = 0V ies GE C Output Capacitance 160 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 30 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE Pulse width 80s duty factor 0.1%. max. junction temperature. ( See fig. 13b ) Pulse width 5.0s, single shot. V = 80%(V ), V = 20V, L = 10H, R = 5.0, CC CES GE G (See fig. 13a) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com