PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating V = 1200V CES frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode V = 2.78V CE(on) typ. New IGBT design provides tighter G parameter distribution and higher efficiency than previous generations V = 15V, I = 24A GE C E TM IGBT co-packaged with HEXFRED ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT s . Minimized recovery characteristics require TO-247AC less/no snubbing Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current 45 C C I T = 100C Continuous Collector Current 24 A C C I Pulsed Collector Current 180 CM I Clamped Inductive Load Current 180 LM I T = 100C Diode Continuous Forward Current 16 F C I Diode Maximum Forward Current 180 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 200 D C W P T = 100C Maximum Power Dissipation 78 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.64 JC R Junction-to-Case - Diode 0.83 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 04/26/04IRG4PH50UDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.20 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.56 3.5 I = 20A V = 15V CE(on) C GE 2.78 3.7 I = 24A C 3.20 V I = 45A See Fig. 2, 5 C 2.54 I = 24A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -13 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 23 35 S V = 100V, I = 24A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 1200V CES GE CE 6500 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 2.5 3.5 V I = 16A See Fig. 13 FM C 2.1 3.0 I = 16A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 160 250 I = 24A g C Qge Gate - Emitter Charge (turn-on) 27 40 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 53 80 V = 15V gc GE t Turn-On Delay Time 47 T = 25C d(on) J t Rise Time 24 ns I = 24A, V = 800V r C CC t Turn-Off Delay Time 110 170 V = 15V, R = 5.0 d(off) GE G t Fall Time 180 260 Energy losses includetai and f E Turn-On Switching Loss 2.10 diode reverse recovery. on E Turn-Off Switching Loss 1.50 mJ See Fig. 9, 10, 18 off E Total Switching Loss 3.60 4.6 ts t Turn-On Delay Time 46 T = 150C, See Fig. 11, 18 d(on) J t Rise Time 27 ns I = 24A, V = 800V r C CC t Turn-Off Delay Time 240 V = 15V, R = 5.0 d(off) GE G t Fall Time 330 Energy losses includetai and f E Total Switching Loss 6.38 mJ diode reverse recovery. ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 3600 V = 0V ies GE C Output Capacitance 160 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 31 = 1.0MHz res t Diode Reverse Recovery Time 90 135 ns T = 25C See Fig. rr J 164 245 T = 125C 14 I = 16A J F I Diode Peak Reverse Recovery Current 5.8 10 A T = 25C See Fig. rr J 8.3 15 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 260 675 nC T = 25C See Fig. rr J 680 1838 T = 125C 16 di/dt = 200A/s J di /dt Diode Peak Rate of Fall of Recovery 120 A/s T = 25C See Fig. (rec)M J During t 76 T = 125C 17 b J 2 www.irf.com