PD - 91683B IRG4PSC71K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features V = 600V CES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins V = 1.83V High abort circuit rating IGBTs, optimized for CE(on) typ. G motorcontrol Minimum switching losses combined with low V = 15V, I = 60A E GE C conduction losses n-channel Tightest parameter distribution Creepage distance increased to 5.35mm Benefits Highest current rating IGBT Maximum power density, twice the power handling of the TO-247, less space than TO-264 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 85 C C I T = 100C Continuous Collector Current 60 C C A I Pulsed Collector Current 200 CM I Clamped Inductive Load Current 200 LM t Short Circuit Withstand Time 10 s SC V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 180 mJ ARV P T = 25C Maximum Power Dissipation 350 D C W P T = 100C Maximum Power Dissipation 140 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Thermal Resistance Mechanical Parameter Min. Typ. Max. Units R Junction-to-Case 0.36 JC R Case-to-Sink, flat, greased surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 38 JA Recommended Clip Force 20.0(2.0) N (kgf) Weight 6 (0.21) g (oz) www.irf.com 1 IRG4PSC71K Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.5 V/C V = 0V, I = 10mA (BR)CES J GE C 1.83 2.3 I = 60A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.20 I = 100A See Fig.2, 5 CE(ON) C 1.81 I = 60A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -8.0 mV/C V = V , I = 1.5mA GE(th) J CE GE C g Forward Transconductance 31 46 S V = 50V, I = 60A fe CE C 500 V = 0V, V = 600V GE CE 2.0 V = 0V, V = 10V, T = 25C GE CE J 5.0 mA V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J % & % ( ) * + , % -%. % ) / . *00 + , % ) 11 2 % 3 2 - ( * &4% % 5 .. (13 , .. . % 6 7 % 7 *00 &4% % 5 .. (3 8 6 6% 6 9 . 9 , &4% % 5 .. )(11 ( & % ( 32 2 & % % :% . 6 % . 2 ) / 2 - ( * + , % 1 / 2 & % ( 2 2 -%. % 2 . *00 + , % 2 - ( , % 11 , .. . % 6 7 % 7 &4% % 5 .. ( 8 6 6% 6 9 . 9 , 5 % 6 < . 6 0 = > = = % 3 * = = % 1 = & % ( 1 - 9 . .0 = % 3 ( < Notes: Repetitive rating V = 20V, pulse width limited by GE Pulse width 80s duty factor 0.1%. max. junction temperature. ( See fig. 13b ) Pulse width 5.0s, single shot. V = 80%(V ), V = 20V, L = 10H, R = 5.0, CC CES GE G (See fig. 13a) Current limited by the package, (Die current = 100A) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com