PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast switching speed optimized for operating V = 1200V CES frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighter V = 2.50V CE(on) typ. G parameter distribution and higher efficiency (minimum switching and conduction losses) than V = 15V, I = 50A E GE C prior generations n-channel Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 Creepage distance increased to 5.35mm Benefits Generation 4 IGBT s offer highest efficiencies available Maximum power density, twice the power handling of the TO-247, less space than TO-264 IGBTs optimized for specific application conditions Cost and space saving in designs that require SUPER - 247 multiple, paralleled IGBTs Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 99 A C C I T = 100C Continuous Collector Current 50 C C Pulse Collector Current I 200 CM Clamped Inductive Load current I 200 LM V Gate-to-Emitter Voltage 20 V GE Reverse Voltage Avalanche Energy E 150 mJ ARV P T = 25C Maximum Power Dissipation 350 W D C T = 100C P Maximum Power Dissipation 140 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 0.36 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 38 JA Recommended Clip Force 20 (2.0) N (kgf) WtWeight 6 (0.21)g (oz.) www.irf.com 1 IRG4PSH71U Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage V 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 19 V V = 0V, I = 1.0A (BR)ECS GE C V /T V = 0V, I = 1mA Temperature Coeff. of Breakdown Voltage 0.78 V/C (BR)CES J GE C 2.52 2.70 V I = 70A V = 15V C GE V Collector-to-Emitter Saturation Voltage 3.17 I = 140A See Fig.2, 5 CE(on) C I = 70A, T = 150C 2.68 C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Threshold Voltage temp. coefficient -9.2 mV/C V = V , I = 1.0mA GE(th) J CE GE C V = 100V, I = 70A gfe Forward Transconductance 48 72 S CE C I Zero Gate Voltage Collector Current 500 A V = 0V, V = 1200V CES GE CE V = 0V, V = 10V 2.0 GE CE 5000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 370 560 I = 70A g C Q Gate-to-Emitter Charge (turn-on) 61 24 nC V = 400V See Fig.8 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 120 50 gc GE t Turn-On delay time 51 I = 70A, V = 960V d(on) C CC t Rise time 70 ns V = 15V, R = 5.0 r GE G t Turn-Off delay time 280 390 Energy losses includetai d(off) t Fall time 170 260 See Fig. 9, 10, 11, 14 f E Turn-On Switching Loss 4.77 on E Turn-Off Switching Loss 9.54 mJ off E Total Switching Loss 14.3 15.8 tot t T = 150C, See Fig. 9, 10, 11, 14 Turn-On delay time 49 d(on) J t Rise time 70 ns I = 70A, V = 960V r C CC t Turn-Off delay time 390 V = 15V, R = 5.0 d(off) GE G t Fall time 360 Energy losses includetai f E Total Switching Loss 25 mJ TS L Internal Emitter Inductance 13 nH Measured 5mm from package E C V = 0V Input Capacitance 7280 ies GE C Output Capacitance 290 pF V = 30V, See Fig.7 oes CC C Reverse Transfer Capacitance 50 f = 1.0MHz res Notes: Repetitive rating: V =20V pulse width limited by maximum junction temperature (figure 20) GE V =80%(V ), V =20V, L=10H, R = 5.0 (figure 13a) CC CES GE G Pulse width 80s duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating pulse width limited by maximumjunction temperature. 2 www.irf.com