PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for V = 600V CES high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s 125C, V = 15V GE V = 2.39V CE(on) typ. Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than previous generation V = 15V, I = 5.0A GE C TM E IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-252AA package Benefits Latest generation 4 IGBT s offer highest power density motor controls possible TM HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and D-PAK switching losses For hints see design tip 97003 TO-252AA Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 9.0 C C I T = 100C Continuous Collector Current 5.0 C C I Pulsed Collector Current 18 A CM I Clamped Inductive Load Current 18 LM I T = 100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 16 FM t Short Circuit Withstand Time 10 s sc V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 38 D C W P T = 100C Maximum Power Dissipation 15 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 3.3 JC R Junction-to-Case - Diode 7.0 JC C/W R Junction-to-Ambient (PCB mount)* 50 JA Wt Weight 0.3 (0.01) g (oz) * When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 12/30/00IRG4RC10KD Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 VV = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.58 V/CV = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.39 2.62 I = 5.0A V = 15V CE(on) C GE 3.25 VI = 9.0A See Fig. 2, 5 C 2.63 I = 5.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.5 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -11 mV/CV = V , I = 250A GE(th) J CE GE C g Forward Transconductance 1.2 1.8 SV = 50V, I = 5.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 4.0A See Fig. 13 FM C 1.4 1.7 I = 4.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 19 29 I = 5.0A g C Q Gate - Emitter Charge (turn-on) 2.9 4.3 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 9.8 15 V = 15V gc GE t Turn-On Delay Time 49 d(on) t Rise Time 28 T = 25C r J ns t Turn-Off Delay Time 97 150 I = 5.0A, V = 480V d(off) C CC t Fall Time 140 210 V = 15V, R = 100 f GE G E Turn-On Switching Loss 0.25 Energy losses includetai on E Turn-Off Switching Loss 0.14 mJ and diode reverse recovery off E Total Switching Loss 0.39 0.48 See Fig. 9,10,14 ts t Short Circuit Withstand Time 10 s V = 360V, T = 125C sc CC J V = 15V, R = 100 , V < 500V GE G CPK t Turn-On Delay Time 46 T = 150C, See Fig. 10,11,14 d(on) J t Rise Time 32 I = 5.0A, V = 480V r C CC ns t Turn-Off Delay Time 100 V = 15V, R = 100 d(off) GE G t Fall Time 310 Energy losses includetai f E Total Switching Loss 0.56 mJ and diode reverse recovery ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 220 V = 0V ies GE C Output Capacitance 29 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.5 = 1.0MHz res t Diode Reverse Recovery Time 28 42 ns T = 25C See Fig. rr J 38 57 T = 125C 14 I = 4.0A J F I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C See Fig. rr J 3.7 6.7 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 40 60 nC T = 25C See Fig. rr J 70 105 T = 125C 16 di/dt = 200A/s J di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C See Fig. (rec)M J During t 235 T = 125C 17 b J 2 www.irf.com