PD - 95192A
IRG4RC10SDPbF
Standard Speed CoPack
INSULATED GATE BIPOLAR TRANSISTOR WITH
IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features
Extremely low voltage drop 1.1V(typ) @ 2A
S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
=
KHz in brushless DC drives.
G
Tight parameter distribution
TM
IGBT co-packaged with HEXFRED ultrafast,
E
ultra-soft-recovery anti-parallel diodes for use
n-channel
in bridge configurations
Industry standard TO-252AA package
Lead-Free
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Lower losses than MOSFET's conduction and
Diode losses
Parameter Max. Units
V Collector-to-Emitter Voltage 600 V
CES
I @ T = 25C Continuous Collector Current 14
C C
I @ T = 100C Continuous Collector Current 8.0
C C
I Pulsed Collector Current 18 A
CM
I Clamped Inductive Load Current 18
LM
I @ T = 100C Diode Continuous Forward Current 4.0
F C
I Diode Maximum Forward Current 16
FM
V Gate-to-Emitter Voltage 20 V
GE
P @ T = 25C Maximum Power Dissipation 38
D C
P @ T = 100C Maximum Power Dissipation 15
D C
T Operating Junction and -55 to +150
J
T Storage Temperature Range C
STG
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case - IGBT 3.3
JC
R Junction-to-Case - Diode 7.0
JC
R Junction-to-Ambient (PCB mount)* 50
JA
Wt Weight 0.3 (0.01) g (oz)
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com 1
07/04/07IRG4RC10SDPbF
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A
(BR)CES GE C
V /T Temperature Coeff. of Breakdown Voltage 0.64 V/C V = 0V, I = 1.0mA
(BR)CES J
GE C
V Collector-to-Emitter Saturation Voltage 1.58 1.8 I = 8.0A V = 15V
CE(on) C GE
2.05 V I = 14.0A See Fig. 2, 5
C
1.68 I = 8.0A, T = 150C
C J
V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A
GE(th) CE GE C
V /T Temperature Coeff. of Threshold Voltage -9.5 mV/C V = V , I = 250A
GE(th) J CE GE C
g Forward Transconductance 3.65 5.48 S V = 100V, I =8.0A
fe CE C
I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V
CES GE CE
1000 V = 0V, V = 600V, T = 150C
GE CE J
V Diode Forward Voltage Drop 1.5 1.8 V I =4.0A See Fig. 13
FM C
1.4 1.7 I =4.0A, T = 150C
C J
I Gate-to-Emitter Leakage Current 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) 15 22 I = 8.0A
g C
Qge Gate - Emitter Charge (turn-on) 2.42 3.6 nC V = 400V See Fig. 8
CC
Q Gate - Collector Charge (turn-on) 6.53 9.8 V = 15V
gc GE
t Turn-On Delay Time 76 T = 25C
d(on) J
t Rise Time 32 ns I = 8.0A, V = 480V
r C CC
t Turn-Off Delay Time 815 1200 V = 15V, R = 100
d(off) GE G
t Fall Time 720 1080 Energy losses includetai and
f
E Turn-On Switching Loss 0.31 diode reverse recovery.
on
E Turn-Off Switching Loss 3.28 mJ See Fig. 9, 10, 18
off
E Total Switching Loss 3.60 10.9
ts
E Total Switching Loss 1.46 2.6 mJ I = 5.0A
ts C
t Turn-On Delay Time 70 T = 150C, See Fig. 10,11, 18
d(on) J
t Rise Time 36 ns I = 8.0A, V = 480V
r C CC
t Turn-Off Delay Time 890 V = 15V, R = 100
d(off) GE G
t Fall Time 890 Energy losses includetai and
f
E Total Switching Loss 3.83 mJ diode reverse recovery.
ts
L Internal Emitter Inductance 7.5 nH Measured 5mm from package
E
C Input Capacitance 280 V = 0V
ies GE
C Output Capacitance 30 pF V = 30V See Fig. 7
oes CC
C Reverse Transfer Capacitance 4.0 = 1.0MHz
res
t Diode Reverse Recovery Time 28 42 ns T = 25C See Fig.
rr J
38 57 T = 125C 14 I =4.0A
J F
I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C See Fig.
rr J
3.7 6.7 T = 125C 15 V = 200V
J R
Q Diode Reverse Recovery Charge 40 60 nC T = 25C See Fig.
rr J
70 105 T = 125C 16 di/dt = 200A/s
J
di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C See Fig.
(rec)M J
During t 235 T = 125C 17
b J
Details of note through are on the last page
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