PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 V = 600V CES kHz in resonant mode). Generation 4 IGBT design provides tighter V = 1.82V CE(on) typ. parameter distribution and higher efficiency than G previous generation IGBTs. V = 15V, I = 12A Industry standard TO-252AA package E GE C Combines very low V with low switching CE(on) N-channel losses Benefits Generation 4 IGBTs offer highest efficiency Optimized for specific application conditions High power density and current rating D-Pak TO-252AA Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 22 C C I T = 100C Continuous Collector Current 12 A C C I Pulsed Collector Current 44 CM I Clamped Inductive Load Current 44 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 5.0 mJ ARV P T = 25C Maximum Power Dissipation 66 D C W P T = 100C Maximum Power Dissipation 26 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.9 JC C/W R Junction-to-Ambient (PCB mount)* 50 JA Wt Weight 0.3 (0.01) g (oz) * When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2/22/01IRG4RC20F Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.72 V/C V = 0V, I = 1.0mA (BR)CES J GE C 1.82 2.1 I = 12A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.42 I = 22A See Fig.2, 5 CE(ON) C V 2.04 I = 12A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 5.2 7.75 S V = 100V, I = 12A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 27 40 I = 12A g C Q Gate - Emitter Charge (turn-on) 4.8 6.8 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 11.4 17 V = 15V gc GE t Turn-On Delay Time 26 d(on) t Rise Time 24 T = 25C r J ns t Turn-Off Delay Time 194 290 I = 12A, V = 480V d(off) C CC t Fall Time 226 340 V = 15V, R = 50 f GE G E Turn-On Switching Loss 0.19 Energy losses includetai on E Turn-Off Switching Loss 0.92 mJ See Fig. 9, 10, 14 off E Total Switching Loss 1.11 1.4 ts t Turn-On Delay Time 25 T = 150C, d(on) J t Rise Time 26 I = 12A, V = 480V r C CC ns t Turn-Off Delay Time 263 V = 15V, R = 50 d(off) GE G t Fall Time 443 Energy losses includetai f E Total Switching Loss 1.89 mJ See Fig. 11, 14 ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 540 V = 0V ies GE C Output Capacitance 37 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.0 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE Pulse width 80s duty factor 0.1%. max. junction temperature. ( See fig. 13b ) V = 80%(V ), V = 20V, L = 10H, R = 50, CC CES GE G Pulse width 5.0s, single shot. (See fig. 13a) Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com