IRG6B330UDPbF Key Parameters Features V min 330 V Advanced Trench IGBT Technology CE Optimized for Sustain and Energy Recovery V typ. I = 70A 1.69 V CE(ON) C Circuits in PDP Applications I max T = 25C 250 A RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for Improved Panel Efficiency High Repetitive Peak Current Capability C Lead Free Package E C G G E TO-220AB n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V Gate-to-Emitter Voltage 30 V GE I T = 25C Continuous Collector Current, V 15V 70 A C C GE I T = 100C Continuous Collector, V 15V 40 C C GE I T = 25C Repetitive Peak Current 250 RP C P T = 25C Power Dissipation 160 W D C P T = 100C Power Dissipation 63 D C Linear Derating Factor 1.3 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Soldering Temperature for 10 seconds 300 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.80 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.6 2.4 JC R Case-to-Sink (flat, greased surface) 0.24 C/W CS R Junction-to-Ambient (typical socket mount) 40 JA Weight 6.0 (0.21)g (oz) www.irf.com 1 4/20/10 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 1 mA BV Collector-to-Emitter Breakdown Voltage 330 V CES GE CE Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.34 V/C CES J CE V = 15V, I = 25A 1.18 1.48 GE CE V = 15V, I = 40A 1.36 1.68 GE CE V V = 15V, I = 70A CE(on) Static Collector-to-Emitter Voltage 1.69 2.09 V GE CE V = 15V, I = 120A 2.26 2.76 GE CE V = 15V, I = 70A, T = 150C 1.93 GE CE J V V = V , I = 500A Gate Threshold Voltage 2.6 5.0 V CE GE CE GE(th) V /T Gate Threshold Voltage Coefficient -11 mV/C GE(th) J I V = 330V, V = 0V Collector-to-Emitter Leakage Current 2.0 25 A CE GE CES V = 330V, V = 0V, T = 100C 5.0 CE GE J V = 330V, V = 0V, T = 150C 100 CE GE J V = 30V I Gate-to-Emitter Forward Leakage 100 nA GES GE V = -30V Gate-to-Emitter Reverse Leakage -100 GE V = 25V, I = 25A g Forward Transconductance 50 S fe CE CE V = 200V, I = 25A, V = 15V Q Total Gate Charge 85 nC g CE C GE Q Gate-to-Collector Charge 31 gc t Turn-On delay time 47 I = 25A, V = 196V d(on) C CC t Rise time 37 ns R = 10, L=200H, L = 200nH r G S t Turn-Off delay time 176 T = 25C d(off) J t Fall time 99 f t Turn-On delay time 45 I = 25A, V = 196V d(on) C CC t Rise time 38 ns R = 10, L=200H, L = 200nH r G S t Turn-Off delay time 228 T = 150C d(off) J t Fall time 183 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.40F, V = 15V GE 834 , E Energy per Pulse J V = 240V, R = 5.1 T = 25C PULSE CC G J L = 220nH, C= 0.40F, V = 15V GE 985 V = 240V, R = 5.1, T = 100C CC G J V = 0V C Input Capacitance 2297 GE iss C V = 30V Output Capacitance 141 pF CE oss C = 1.0MHz, See Fig.13 Reverse Transfer Capacitance 74 rss L Internal Collector Inductance 5.0 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 13 from package E and center of die contact Diode Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions I Average Forward Current at F(AV) 8.0 A T =155C C I T = 155C, PW = 6.0ms half sine wave Non Repetitive Peak Surge Current 100 A FSM J I = 8A V Forward Voltage 1.19 1.3 V F F I = 8A, T = 150C 0.94 1.0 F J t I = 1A, di/dt = -50A/s, V =30V Reverse Recovery Time 35 60 ns F R rr T = 25C 43 J T = 125C I = 8A 67 J F Q Reverse Recovery Charge 60 nC T = 25C rr J di/dt = 200A/s T = 125C V = 200V 210 J R I T = 25C rr Peak Recovery Current 2.8 A J 6.3 T = 125C J Pulse width 400s duty cycle 2%. Half sine wave with duty cycle = 0.1, ton=2sec. R is measured at T of approximately 90C. J 2 www.irf.com