IRG6IC30UPbF Key Parameters Features V min 600 V CE Advanced Trench IGBT Technology V typ. I = 25A 1.50 V Optimized for Sustain and Energy Recovery CE(ON) C circuits in PDP applications I max T = 25C 250 A RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for improved panel efficiency High repetitive peak current capability Lead Free package C G E n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Max. Parameter Units V Gate-to-Emitter Voltage 30 V GE I T = 25C Continuous Collector Current, V 15V 25 A C C GE I T = 100C Continuous Collector, V 15V 12 C C GE I T = 25C 250 Repetitive Peak Current RP C P T = 25C 37 Power Dissipation W D C P T = 100C Power Dissipation 15 D C 0.30 Linear Derating Factor W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Soldering Temperature for 10 seconds 300 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.1 C/W JC Junction-to-Ambient R 65 JA www.irf.com 1 03/31/09 Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 1.0mA BV CES Collector-to-Emitter Breakdown Voltage 600 V GE CE V V = 0V, I = 1.0A Emitter-to-Collector Breakdown Voltage 15 V (BR)ECS GE CE V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 0.49 V/C CE CES J V = 15V, I = 12A 1.29 GE CE V = 15V, I = 25A 1.50 1.92 GE CE V = 15V, I = 40A 1.73 V GE CE V Static Collector-to-Emitter Voltage CE(on) V = 15V, I = 70A 2.16 GE CE V = 15V, I = 120A 2.88 GE CE V = 15V, I = 25A, T = 150C 1.51 GE CE J V V = V , I = 500A Gate Threshold Voltage 2.6 5.0 V CE GE CE GE(th) V / T Gate Threshold Voltage Coefficient -8.9 mV/C GE(th) J V = 600V, V = 0V I Collector-to-Emitter Leakage Current 2.0 20 CES CE GE V = 600V, V = 0V, T = 100C 10 CE GE J A V = 600V, V = 0V, T = 125C 40 100 CE GE J V = 600V, V = 0V, T = 150C 150 CE GE J V = 30V I GES Gate-to-Emitter Forward Leakage 100 nA GE V = -30V Gate-to-Emitter Reverse Leakage -100 GE g V = 25V, I = 25A Forward Transconductance 32 S CE CE fe V = 400V, I = 25A, V = 15V Q Total Gate Charge 79 nC g CE C GE Q Gate-to-Collector Charge 30 gc t Turn-On delay time 20 I = 25A, V = 400V d(on) C CC t Rise time 16 ns R = 10 , L=200H r G t T = 25C Turn-Off delay time 160 d(off) J t Fall time 120 f t I = 25A, V = 400V Turn-On delay time 18 d(on) C CC t Rise time 17 ns R = 10 , L=200H r G t T = 150C Turn-Off delay time 190 d(off) J t Fall time 240 f V = 240V, V = 15V, R = 5.1 t Shoot Through Blocking Time 100 ns st CC GE G L = 220nH, C= 0.40F, V = 15V GE 1020 E V = 240V, R = 5.1, T = 25C PULSE Energy per Pulse J CC G J L = 220nH, C= 0.40F, V = 15V GE 1150 V = 240V, R = 5.1, T = 100C CC G J Class 2 Human Body Model (Per JEDEC standard JESD22-A114) ESD Class B Machine Model (Per EIA/JEDEC standard EIA/JESD22-A115) C V = 0V Input Capacitance 2390 ies GE V = 30V C Output Capacitance 85 pF oes CE C = 1.0MHz, See Fig.13 Reverse Transfer Capacitance 58 res L Internal Collector Inductance 4.5 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 7.5 from package E and center of die contact Half sine wave with duty cycle <= 0.02, ton=1.0sec. R is measured at Pulse width 400s duty cycle 2%. 2 www.irf.com