IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low V Trench IGBT Technology CE (ON) V = 1200V CES Low Switching Losses Maximum Junction Temperature 175 C I = 23A, T = 100C C C 10 S short Circuit SOA Square RBSOA G t 10s, T =175C J(max) SC 100% of the parts tested for I LM E Positive V Temperature Co-Efficient CE (ON) V typ. = 2.05V CE(on) Tight Parameter Distribution n-channel Lead Free Package C E C Benefits G High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to TO-247AC Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 33 C C I T = 100C C C Continuous Collector Current 23 I A Nominal Current 9.0 NOMINAL I CM Pulse Collector Current Vge = 15V 27 I Clamped Inductive Load Current Vge = 20V 36 LM V V Continuous Gate-to-Emitter Voltage 30 GE P T = 25C D C Maximum Power Dissipation 210 W P T = 100C Maximum Power Dissipation 110 D C T J Operating Junction and -55 to +175 T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) JC 0.70 R C/W CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 1 www.irf.com 06/23/09IRG7PH30K10PbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A CT6 (BR)CES GE C V / T V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J Temperature Coeff. of Breakdown Voltage 1.27 V/C GE C 2.05 2.35 I = 9.0A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 2.56 V I = 9.0A, V = 15V, T = 150C 8,9,10 CE(on) C GE J I = 9.0A, V = 15V, T = 175C 2.65 C GE J V Gate Threshold Voltage 5.0 7.5 V V = V , I = 400A 8,9 GE(th) CE GE C V / TJ V = V , I = 400A (25C - 175C) 10,11 GE(th) Threshold Voltage temp. coefficient -16 mV/C CE GE C gfe Forward Transconductance 6.2 S V = 50V, I = 9.0A, PW = 80s CE C I Collector-to-Emitter Leakage Current 1.0 25 V = 0V, V = 1200V CES GE CE A V = 0V, V = 1200V, T = 175C 400 GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 45 68 I = 9.0A 18 g C Q = 15V CT1 Gate-to-Emitter Charge (turn-on) 8.7 13 nC V ge GE Q Gate-to-Collector Charge (turn-on) 20 30 V = 600V gc CC E Turn-On Switching Loss 530 760 I = 9.0A, V = 600V, V = 15V CT4 on C CC GE E R = 22 , L = 1000H, L = 150nH,T = 25C Turn-Off Switching Loss 380 600 J off G S J E Total Switching Loss 910 1360 Energy losses include tail & diode reverse recovery total t I = 9.0A, V = 600V, V = 15V CT4 Turn-On delay time 14 31 d(on) C CC GE t Rise time 24 41 ns R = 22 , L = 1000H, L = 150nH,T = 25C r G S J t Turn-Off delay time 110 130 d(off) t Fall time 38 56 f E Turn-On Switching Loss 850 I = 9.0A, V = 600V, V =15V 12,14 on C CC GE E Turn-Off Switching Loss 750 J R =22 , L=1000H, L =150nH, T = 175C CT4 off G S J E Total Switching Loss 1600 Energy losses include tail & diode reverse recovery WF1, WF2 total t Turn-On delay time 12 I = 9.0A, V = 600V, V =15V 13,15 d(on) C CC GE t R = 22 , L = 1000H, L = 150nH CT4 r Rise time 23 ns G S t Turn-Off delay time 130 T = 175C WF1 d(off) J t Fall time 270 WF2 f C Input Capacitance 1070 pF V = 0V 17 ies GE C V = 30V Output Capacitance 63 oes CC C Reverse Transfer Capacitance 26 f = 1.0Mhz res T = 175C, I = 36A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CT2 CC Rg = 10 , V = +20V to 0V, T =175C GE J V = 600V, Vp =1200V ,T = 150C, 16, CT3 SCSOA Short Circuit Safe Operating Area 10 s CC J Rg = 22 , V = +15V to 0V WF4 GE Notes: V = 80% (V ), V = 20V, L = 200H, R = 51 . CC CES GE G Pulse width 400s duty cycle 2%. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com