IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Square RBSOA I = 20A NOMINAL 100% of the parts tested for I LM Positive V temperature co-efficient CE (ON) G T = 150C J(max) Ultra fast soft recovery co-pak diode Tight parameter distribution E V typ. = 1.9V CE(on) Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications E E C G C G U.P.S. TO-247AC TO-247AD Welding IRG7PH35UDPbF IRG7PH35UD-EP Solar Inverter GC E Induction Heating Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 50 C C I T = 100C Continuous Collector Current 25 C C I Nominal Current 20 NOMINAL I Pulse Collector Current, V =15V 60 CM GE A Clamped Inductive Load Current, V =20V I GE 80 LM I T = 25C Diode Continous Forward Current 50 F C I T = 100C Diode Continous Forward Current 25 F C I Diode Maximum Forward Current 80 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 180 D C W P T = 100C Maximum Power Dissipation 70 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.70 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.65 JC C/W R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 02/08/10IRG7PH35UDPbF/IRG7PH35UD-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C V I = 20A, V = 15V, T = 25C Collector-to-Emitter Saturation Voltage 1.9 2.2 V CE(on) C GE J 2.3 I = 20A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 600A GE(th) CE GE C V /TJ = V , I = 600A (25C - 150C) GE(th) Threshold Voltage temp. coefficient -16 mV/C V CE GE C gfe Forward Transconductance 22 S V = 50V, I = 20A, PW = 30s CE C I V = 0V, V = 1200V Collector-to-Emitter Leakage Current 2.0 100 A CES GE CE 2000 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 2.8 3.6 V I = 20A FM F I = 20A, T = 150C 2.5 F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 20A Total Gate Charge (turn-on) 85 130 g C Q Gate-to-Emitter Charge (turn-on) 15 20 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 35 50 V = 600V gc CC E I = 20A, V = 600V, V = 15V Turn-On Switching Loss 1060 1300 on C CC GE E Turn-Off Switching Loss 620 850 J R = 10, L = 200uH, L = 150nH, T = 25C off G S J E Total Switching Loss 1680 2150 Energy losses include tail & diode reverse recovery total t = 20A, V = 600V, V = 15V Turn-On delay time 30 50 I d(on) C CC GE t Rise time 15 30 ns R = 10, L = 200uH, L = 150nH, T = 25C r G S J t Turn-Off delay time 160 180 d(off) t Fall time 80 105 f E Turn-On Switching Loss 1750 I = 20A, V = 600V, V =15V on C CC GE E R =10, L=200uH, L =150nH, T = 150C Turn-Off Switching Loss 1120 J off G S J E Total Switching Loss 2870 Energy losses include tail & diode reverse recovery total t Turn-On delay time 30 I = 20A, V = 600V, V = 15V d(on) C CC GE t R = 10, L = 200uH, L = 150nH Rise time 15 ns r G S t Turn-Off delay time 190 T = 150C d(off) J t Fall time 210 f C Input Capacitance 1940 pF V = 0V ies GE C Output Capacitance 120 V = 30V oes CC C Reverse Transfer Capacitance 40 f = 1.0Mhz res T = 150C, I = 80A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10, V = +20V to 0V GE Erec Reverse Recovery Energy of the Diode 790 J T = 150C J t Diode Reverse Recovery Time 105 ns V = 600V, I = 20A rr CC F I Peak Reverse Recovery Current 40 A V = 15V, Rg = 10 , L =1.0mH, L = 150nH rr GE s Notes: V = 80% (V ), V = 20V, R = 50. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com