X-On Electronics has gained recognition as a prominent supplier of IRG7PH35UDPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRG7PH35UDPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRG7PH35UDPBF Infineon

IRG7PH35UDPBF electronic component of Infineon
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Part No.IRG7PH35UDPBF
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
Datasheet: IRG7PH35UDPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.7537
10 : USD 8.4672
25 : USD 8.0676
100 : USD 6.9984
500 : USD 6.0912
1000 : USD 5.7024
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.0772
3 : USD 4.8145
8 : USD 4.5559
25 : USD 4.3769
N/A

Obsolete
0
MOQ : 25
Multiples : 25
25 : USD 7.4816
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Factory Pack Quantity :
Continuous Collector Current Ic Max
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRG7PH35UDPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG7PH35UDPBF and other electronic components in the IGBT Transistors category and beyond.

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The IRG7PH35UDPBF is a metal-halide based IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. It features a built-in freewheeling diode, a functional temperature range of -40°C to +125°C and is rated for a voltage of 1150V, a continuous current of 35A, collector-emitter breakdown voltage of 900V and a collector-emitter saturation voltage of 1.8V at 25°C. It is used in applications such as motor control systems and renewable energy systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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