INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Square RBSOA I = 45A, T = 100C C C Ultra-low V Diode F T = 150C 1300Vpk repetitive transient capacity J(max) G 100% of the parts tested for I LM V typ. = 1.7V I = 30A CE(on) C Positive V temperature co-efficient CE (ON) E Tight parameter distribution n-channel Lead free package Benefits G Device optimized for induction heating and soft switching applications High Efficiency due to Low V , low switching losses CE(on) and Ultra-low V F E C Rugged transient performance for increased reliability G Excellent current sharing in parallel operation Low EMI TO-247AD G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH42UD1MPbF TO-247AD Tube 25 IRG7PH42UD1MPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 CES V V Repetitive Transient Collector-to-Emitter Voltage (BR) Transient 1300 I T = 25C 85 Continuous Collector Current C C I T = 100C Continuous Collector Current 45 C C I Pulse Collector Current, V =15V 200 CM GE I A Clamped Inductive Load Current, V =20V 120 LM GE I T = 25C F C Diode Continous Forward Current 70 I T = 100C F C Diode Continous Forward Current 35 I Diode Repetitive Peak Forward Current FRM 120 V GE Continuous Gate-to-Emitter Voltage 30 V P T = 25C D C Maximum Power Dissipation 313 W P T = 100C Maximum Power Dissipation 125 D C T J Operating Junction and -55 to +150 T C STG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) JC Thermal Resistance Junction-to-Case-(each IGBT) 0.4 R (Diode) Thermal Resistance Junction-to-Case-(each Diode) JC 1.05 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C V(BR)CES/ T J Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 2.0mA (25C-150C) GE C 1.7 2.0 I = 30A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V CE(on) 2.0 I = 30A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 1.0mA GE(th) CE GE C gfe Forward Transconductance 32 S V = 50V, I = 30A, PW = 80s CE C 1.0 100 V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current A CES 230 V = 0V, V = 1200V, T = 150C GE CE J 1.15 1.30 I = 30A F V Diode Forward Voltage Drop V FM 1.10 I = 30A, T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 180 270 I = 30A g C Q Gate-to-Emitter Charge (turn-on) 24 36 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 70 110 V = 600V gc CC I = 30A, V = 600V, V = 15V C CC GE J E Turn-Off Switching Loss 1210 1450 R = 10, L = 200H,T = 25C off G J Energy losses include tail t Turn-Off delay time 270 290 I = 30A, V = 600V, V = 15V d(off) C CC GE ns t Fall time 35 43 R = 10, L = 200H,T = 25C f G J I = 30A, V = 600V, V = 15V C CC GE E Turn-Off Switching Loss 1936 JR = 10, L = 200H,T = 150C off G J Energy losses include tail t Turn-Off delay time 300 ns I = 30A, V = 600V, V = 15V d(off) C CC GE t Fall time 160 R = 10, L = 200H, T = 150C f G J C Input Capacitance 3390 V = 0V ies GE C Output Capacitance 130 pF V = 30V oes CC C Reverse Transfer Capacitance 83 f = 1.0Mhz res T = 150C, I = 120A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10, VGE = +20V to 0V Notes: V = 80% (V ), V = 20V, L = 22H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. FBSOA operating conditions only V = 0V, T = 75C PW 10 s GE J