IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Square RBSOA I = 45A, T = 100C C C 100% of the parts tested for I LM Positive V temperature co-efficient CE (ON) G T = 150C J(max) Ultra fast soft recovery co-pak diode Tight parameter distribution E V typ. = 1.7V CE(on) Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E Applications C C G G U.P.S. TO-247AC TO-247AD Welding IRG7PH42UDPbF IRG7PH42UD-EP Solar Inverter GC E Induction Heating Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current (Silicon Limited) 85 C C I T = 100C Continuous Collector Current (Silicon Limited) 45 C C I Nominal Current 30 NOMINAL I Pulse Collector Current, V = 15V 90 A GE CM I Clamped Inductive Load Current, V = 20V 120 GE LM I T = 25C Diode Continous Forward Current 85 F C I T = 100C Diode Continous Forward Current 45 F C Diode Maximum Forward Current 120 I FM Continuous Gate-to-Emitter Voltage 30 V V GE P T = 25C Maximum Power Dissipation 320 W D C Maximum Power Dissipation 130 P T = 100C D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.39 JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 0.56 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 10/26/09IRG7PH42UDPbF/IRG7PH42UD-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.18 V/C V = 0V, I = 2.0mA (25C-150C) (BR)CES J GE C V I = 30A, V = 15V, T = 25C Collector-to-Emitter Saturation Voltage 1.7 2.0 CE(on) C GE J 2.1 V I = 30A, V = 15V, T = 150C C GE J V V = V , I = 1.0mA GE(th) Gate Threshold Voltage 3.0 6.0 V CE GE C V / TJ GE(th) Threshold Voltage temp. coefficient -14 mV/C V = V , I = 1.0mA (25C - 150C) CE GE C gfe Forward Transconductance 32 S V = 50V, I = 30A, PW = 80s CE C I V = 0V, V = 1200V Collector-to-Emitter Leakage Current 4.4 150 A CES GE CE 1200 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 2.0 2.4 V I = 30A FM F I = 30A, T = 150C 2.2 F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 30A Total Gate Charge (turn-on) 157 236 g C Q Gate-to-Emitter Charge (turn-on) 21 32 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 69 104 V = 600V gc CC E I = 30A, V = 600V, V = 15V Turn-On Switching Loss 2105 2374 on C CC GE E Turn-Off Switching Loss 1182 1424 J R = 10 , L = 200H,T = 25C off G J E Energy losses include tail & diode reverse recovery total Total Switching Loss 3287 3798 t Turn-On delay time 25 34 d(on) t Rise time 3241ns r t Turn-Off delay time 229 271 d(off) t Fall time 63 86 f E Turn-On Switching Loss 2978 I = 30A, V = 600V, V =15V on C CC GE E R =10 , L=200H, T = 150C Turn-Off Switching Loss 1968 J off G J E Total Switching Loss 4946 Energy losses include tail & diode reverse recovery total t Turn-On delay time 19 d(on) t Rise time 32 ns r t Turn-Off delay time 290 d(off) t Fall time 154 f C Input Capacitance 3338 pF V = 0V ies GE C Output Capacitance 124 V = 30V oes CC C Reverse Transfer Capacitance 75 f = 1.0Mhz res T = 150C, I = 120A J C V = 960V, Vp =1200V RBSOA Reverse Bias Safe Operating Area FULL SQUARE CC Rg = 10 , V = +20V to 0V GE Erec Reverse Recovery Energy of the Diode 1475 J T = 150C J t Diode Reverse Recovery Time 153 ns V = 600V, I = 30A rr CC F Rg = 10 , L =1.0mH I Peak Reverse Recovery Current 34 A rr Notes: V = 80% (V ), V = 20V, L = 22H, R = 10 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com