IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Maximum junction temperature 175 C I = 60A, T = 100C C C Square RBSOA 100% of the parts tested for I G LM T =175C J(max) Positive V temperature co-efficient CE (ON) E Tight parameter distribution V typ. = 1.7V CE(on) Lead -Free n-channel Benefits High efficiency in a wide range of applications C C Suitable for a wide range of switching frequencies due to low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E C C G G Applications TO-247AC TO-247AD IRG7PH42UPbF IRG7PH42U-EP U.P.S Welding G C E Solar inverter Gate Collector Emitter Induction heating Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 1200 V I T = 25C 90 Continuous Collector Current (Silicon Limited) C C I T = 100C Continuous Collector Current (Silicon Limited) 60 C C I A NOMINAL Nominal Current 30 I Pulse Collector Current, V = 15V 90 CM GE I Clamped Inductive Load Current, V = 20V 120 LM GE V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C D C Maximum Power Dissipation 385 W P T = 100C D C Maximum Power Dissipation 192 T Operating Junction and -55 to +175 J T STG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC 0.39 JC C/W R Thermal Resistance, Case-to-Sink (flat, greased surface) CS 0.24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 1 www.irf.com 03/27/12IRG7PH42UPbF/IRG7PH42U-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C V /T V = 0V, I = 1mA (25C-150C) (BR)CES J Temperature Coeff. of Breakdown Voltage 1.2 V/C GE C 1.7 2.0 I = 30A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.1 V I = 30A, V = 15V, T = 150C CE(on) C GE J I = 30A, V = 15V, T = 175C 2.2 C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 1mA GE(th) CE GE C V /TJ V = V , I = 1mA (25C - 175C) GE(th) Threshold Voltage temp. coefficient -16 mV/C CE GE C gfe Forward Transconductance 32 S V = 50V, I = 30A, PW = 80 s CE C I Collector-to-Emitter Leakage Current 1 150 V = 0V, V = 1200V CES GE CE A V = 0V, V = 1200V, T = 175C 700 GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 30A Total Gate Charge (turn-on) 157 236 g C Q Gate-to-Emitter Charge (turn-on) 21 32 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 69 104 V = 600V gc CC E I = 30A, V = 600V, V = 15V Turn-On Switching Loss 2105 2374 on C CC GE E Turn-Off Switching Loss 1182 1424 J R = 10, L = 200H,T = 25C off G J E Total Switching Loss 3287 3798 Energy losses include tail & diode reverse recovery total t Turn-On delay time 25 34 Diode clamp the same as IRG7PH42UDPbF d(on) t Rise time 32 41 ns r t d(off) Turn-Off delay time 229 271 t Fall time 63 86 f E Turn-On Switching Loss 3186 I = 30A, V = 600V, V =15V on C CC GE E R =10, L=200H, T = 175C Turn-Off Switching Loss 2153 J off G J E Total Switching Loss 5339 Energy losses include tail & diode reverse recovery total t Turn-On delay time 20 Diode clamp the same as IRG7PH42UDPbF d(on) t Rise time 31 ns r t Turn-Off delay time 310 d(off) t Fall time 162 f C Input Capacitance 3338 pF V = 0V ies GE C Output Capacitance 124 V = 30V oes CC C Reverse Transfer Capacitance 75 f = 1.0Mhz res I = 120A C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10 , V = +20V to 0V, T =175C GE J Notes: V = 80% (V ), V = 20V, L = 22H, R = 10 CC CES GE G Pulse width 400s duty cycle 2%. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com