INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Square RBSOA I = 40A NOMINAL 100% of the parts tested for I LM Positive V temperature co-efficient CE (ON) G T = 150C J(max) Ultra fast soft recovery co-pak diode Tight parameter distribution E V typ. = 1.7V CE(on) Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E Applications C C G G U.P.S. TO-247AC TO-247AD Welding IRG7PH46UDPbF IRG7PH46UD-EP Solar Inverter G C E Induction Heating Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current (Silicon Limited) 108 C C I T = 100C Continuous Collector Current (Silicon Limited) 57 C C I Nominal Current 40 NOMINAL I Pulse Collector Current, V = 20V 160 A CM GE I Clamped Inductive Load Current, V = 20V 160 LM GE I T = 25C Diode Continous Forward Current 108 F C I T = 100C Diode Continous Forward Current 57 F C I Diode Maximum Forward Current 160 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 390 W D C P T = 100C Maximum Power Dissipation 156 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.32 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.66 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA IRG7PH46UDPbF/IRG7PH46UD-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100A 1200 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1.0mA (25C-150C) (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.7 2.0 I = 40A, V = 15V, T = 25C CE(on) C GE J I = 40A, V = 15V, T = 150C 2.0 V C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 1.6mA GE(th) CE GE C V / TJ V = V , I = 1.6mA (25C - 150C) GE(th) Threshold Voltage temp. coefficient -13 mV/C CE GE C gfe Forward Transconductance 50 S V = 50V, I = 40A, PW = 20 s CE C I Collector-to-Emitter Leakage Current 1.5 100 A V = 0V, V = 1200V CES GE CE V = 0V, V = 1200V, T = 150C 2.0 mA GE CE J V = 40A Diode Forward Voltage Drop 3.1 4.8 V I FM F 3.0 I = 40A, T = 150C F J I V = 30V Gate-to-Emitter Leakage Current 200 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 220 320 I = 40A g C Q V = 15V Gate-to-Emitter Charge (turn-on) 30 50 nC ge GE Q Gate-to-Collector Charge (turn-on) 85 130 V = 600V gc CC E Turn-On Switching Loss 2610 3515 I = 40A, V = 600V, V = 15V on C CC GE E R = 10, L = 200H,T = 25C Turn-Off Switching Loss 1845 2725 J off G J E Total Switching Loss 4455 6240 Energy losses include tail & diode reverse recovery total t Turn-On delay time 45 60 d(on) t Rise time 4060ns r t Turn-Off delay time 410 450 d(off) t Fall time 45 60 f E Turn-On Switching Loss 3790 I = 40A, V = 600V, V =15V on C CC GE E Turn-Off Switching Loss 2905 J R =10, L=200H, T = 150C off G J E Total Switching Loss 6695 Energy losses include tail & diode reverse recovery total t Turn-On delay time 40 d(on) t Rise time 40 ns r t Turn-Off delay time 480 d(off) t Fall time 200 f C V = 0V Input Capacitance 4820 pF ies GE C Output Capacitance 150 V = 30V oes CC C res Reverse Transfer Capacitance 110 f = 1.0Mhz T = 150C, I = 160A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp 1200V CC Rg = 10, V = +20V to 0V GE = 150C Erec Reverse Recovery Energy of the Diode 1130 J T J t Diode Reverse Recovery Time 140 ns V = 600V, I = 40A rr CC F Rg = 10, L =1.0mH I Peak Reverse Recovery Current 40 A rr Notes: V = 80% (V ), V = 20V, L = 200H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Values influenced by parasitic L and C of the test circuit.