IRG7PH46UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH46U-EP Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Maximum junction temperature 175 C I = 75A, T = 100C C C Square RBSOA 100% of the parts tested for I G LM T =175C J(max) Positive V temperature co-efficient CE (ON) E Tight parameter distribution V typ. = 1.7V CE(on) Lead -Free n-channel Benefits High efficiency in a wide range of applications C Suitable for a wide range of switching frequencies due to C low V and low switching losses CE (ON) Rugged transient performance for increased reliability E E C Excellent current sharing in parallel operation G C G Applications TO-247AC TO-247AD IRG7PH46UPbF IRG7PH46U-EP U.P.S Welding G C E Solar inverter Gate Collector Emitter Induction heating Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C C C Continuous Collector Current (Silicon Limited) 130 I T = 100C C C Continuous Collector Current (Silicon Limited) 75 A I NOMINAL Nominal Current 40 I Pulse Collector Current, V = 20V 160 CM GE I Clamped Inductive Load Current, V = 20V 160 LM GE V V GE Continuous Gate-to-Emitter Voltage 30 P T = 25C D C Maximum Power Dissipation 469 W P T = 100C D C Maximum Power Dissipation 234 T J Operating Junction and -55 to +175 T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC 0.32 JC C/W R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 1 www.irf.com 07/27/12IRG7PH46UPbF/IRG7PH46U-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100A (BR)CES 1200 V GE C V /T (BR)CES J Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1mA (25C-150C) GE C 1.7 2.0 I = 40A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 40A, V = 15V, T = 150C CE(on) C GE J = 40A, V = 15V, T = 175C 2.1 I C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 1.6mA GE(th) CE GE C V /TJ V = V , I = 1.6mA (25C - 175C) GE(th) Threshold Voltage temp. coefficient -15 mV/C CE GE C gfe Forward Transconductance 60 S V = 50V, I = 40A, PW = 20 s CE C I Collector-to-Emitter Leakage Current 1 100 V = 0V, V = 1200V CES GE CE A V = 0V, V = 1200V, T = 175C 1170 GE CE J I Gate-to-Emitter Leakage Current 200 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 40A Total Gate Charge (turn-on) 220 320 g C Q Gate-to-Emitter Charge (turn-on) 30 50 nC V = 15V ge GE Q V = 600V gc Gate-to-Collector Charge (turn-on) 85 130 CC E Turn-On Switching Loss 2560 3460 I = 40A, V = 600V, V = 15V on C CC GE E Turn-Off Switching Loss 1780 2660 J R = 10, L = 200H,T = 25C off G J E Total Switching Loss 4340 6120 Energy losses include tail & diode reverse recovery total t Turn-On delay time 45 65 Diode clamp the same as IRG7PH46UDPbF d(on) t Rise time 40 55 ns r t Turn-Off delay time 410 445 d(off) t Fall time 45 65 f E Turn-On Switching Loss 3950 I = 40A, V = 600V, V =15V on C CC GE E R =10, L=200H, T = 175C Turn-Off Switching Loss 3020 J off G J E Total Switching Loss 6970 Energy losses include tail & diode reverse recovery total t Turn-On delay time 40 Diode clamp the same as IRG7PH46UDPbF d(on) t Rise time 40 ns r t Turn-Off delay time 480 d(off) t Fall time 220 f C Input Capacitance 4820 pF V = 0V ies GE C V = 30V oes Output Capacitance 150 CC C Reverse Transfer Capacitance 110 f = 1.0Mhz res I = 160A C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10 , V = +20V to 0V, T =175C GE J Notes: V = 80% (V ), V = 20V, L = 25H, R = 50 CC CES GE G Pulse width 400s duty cycle 2%. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 117A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com