IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C V = 1200V CES C I = 50A, T =100C C C t 10s, T = 150C SC J(max) G E C E G V typ. = 1.9V IC = 35A CE(ON) C E G n-channel IRG7PH50K10DPbF IRG7PH50K10DEPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and switching losses High efficiency in a Wide Range of Applications CE(ON) 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH50K10DPbF TO-247AC Tube 25 IRG7PH50K10DPbF IRG7PH50K10D-EPbF TO-247AD Tube 25 IRG7PH50K10D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 90 C C I T = 100C Continuous Collector Current 50 C C A I Pulse Collector Current, V=20V 160 CM GE I Clamped Inductive Load Current, V =20V 160 LM GE I T = 25C Diode Continous Forward Current 20 F C I T = 100C Diode Continous Forward Current 10 F C V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 400 D C W P T = 100C Maximum Power Dissipation 160 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.3 R (IGBT) JC Thermal Resistance Junction-to-Case-(each Diode) 1.4 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback March 12, 2014 IRG7PH50K10DPbF/IRG7PH50K10D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 1.4 V/C V = 0V, I = 2mA (25C-150C) V /T GE C (BR)CES J 1.9 2.4 V I = 35A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.4 I = 35A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 7.5 V V = V , I = 1.7mA GE(th) CE GE C Threshold Voltage Temperature Coeff. -16 mV/C V = V , I = 1.7mA (25C-150C) V /T CE GE C GE(th) J gfe Forward Transconductance 20 S V = 50V, I = 35A, PW = 20s CE C 1.0 35 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES = 0V, V = 1200V, T = 150C 1200 V GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE V 2.5 3.3 V I = 8A F F Diode Forward Voltage Drop 2.4 V I = 8A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 200 300 I = 35A g C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 90 135 V = 600V gc CC E Turn-On Switching Loss 2.6 3.5 on E Turn-Off Switching Loss 1.6 2.5 mJ off I = 35A, V = 600V, V =15V C CC GE E Total Switching Loss 4.2 6.0 total R = 5 , T = 25C G J t Turn-On delay time 90 105 d(on) Energy losses include tail & diode t Rise time 60 80 r ns reverse recovery t Turn-Off delay time 340 390 d(off) t Fall time 90 110 f E Turn-On Switching Loss 3.5 on E Turn-Off Switching Loss 2.8 off mJ I = 35A, V = 600V, V =15V C CC GE E Total Switching Loss 6.3 total R = 5 , T = 150C G J t Turn-On delay time 70 d(on) Energy losses include tail & diode t Rise time 60 r ns reverse recovery t Turn-Off delay time 350 d(off) t Fall time 250 f C Input Capacitance 4300 V = 0V ies GE pF V = 30V C Output Capacitance 190 oes CC C Reverse Transfer Capacitance 100 f = 1.0Mhz res T = 150C, I = 160A J C FULL SQUARE V = 960V, Vp 1200V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 190 J J V = 600V, I = 8A t Diode Reverse Recovery Time 130 ns CC F rr A V = 15V, Rg = 5 I Peak Reverse Recovery Current 13 rr GE Notes: V = 80% (V ), V = 20V CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback March 12, 2014