IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low V trench IGBT technology CE (ON) V = 1200V CES Low switching losses Maximum junction temperature 175 C I = 90A, T = 100C C C Square RBSOA 100% of the parts tested for I G LM T =175C J(max) Positive V temperature co-efficient CE (ON) E Tight parameter distribution V typ. = 1.7V CE(on) Lead -Free n-channel Benefits High efficiency in a wide range of applications C C Suitable for a wide range of switching frequencies due to low V and low switching losses CE (ON) Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E C C G G Applications TO-247AC TO-247AD IRG7PH50UPbF IRG7PH50U-EP U.P.S Welding GC E Solar inverter Gate Collector Emitter Induction heating Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 1200 V I T = 25C C C Continuous Collector Current (Silicon Limited) 140 I T = 100C Continuous Collector Current (Silicon Limited) 90 C C I Nominal Current 50 A NOMINAL I Pulse Collector Current, V = 15V 150 CM GE I Clamped Inductive Load Current, V = 20V 200 LM GE V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 556 D C W P T = 100C Maximum Power Dissipation 278 D C T Operating Junction and -55 to +175 J T STG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC JC 0.27 C/W R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 1 www.irf.com 07/28/2010IRG7PH50UPbF/IRG7PH50U-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C V / T V = 0V, I = 1mA (25C-150C) (BR)CES J Temperature Coeff. of Breakdown Voltage 1.0 V/C GE C 1.7 2.0 I = 50A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 50A, V = 15V, T = 150C CE(on) C GE J I = 50A, V = 15V, T = 175C 2.1 C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 2.0mA GE(th) CE GE C V / TJ V = V , I = 1mA (25C - 175C) GE(th) Threshold Voltage temp. coefficient -17 mV/C CE GE C gfe Forward Transconductance 55 S V = 50V, I = 50A, PW = 80s CE C I Collector-to-Emitter Leakage Current 2.0 100 V = 0V, V = 1200V CES GE CE A V = 0V, V = 1200V, T = 175C 1700 GE CE J I Gate-to-Emitter Leakage Current 200 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 290 440 I = 50A g C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q V = 600V Gate-to-Collector Charge (turn-on) 110 170 gc CC E Turn-On Switching Loss 3600 4600 I = 50A, V = 600V, V = 15V on C CC GE E R = 5.0 , L = 200H,T = 25C Turn-Off Switching Loss 2200 3200 J off G J E Total Switching Loss 5800 7800 Energy losses include tail & diode reverse recovery total t Turn-On delay time 35 55 Diode clamp the same as IRG7PH50UDPbF d(on) t Rise time 40 60 ns r t Turn-Off delay time 430 500 d(off) t Fall time 45 65 f = 50A, V = 600V, V =15V E Turn-On Switching Loss 5600 I on C CC GE E Turn-Off Switching Loss 3900 J R =5.0 , L=200H, T = 175C off G J E Total Switching Loss 9500 Energy losses include tail & diode reverse recovery total t Turn-On delay time 30 Diode clamp the same as IRG7PH50UDPbF d(on) t Rise time 45 ns r t Turn-Off delay time 500 d(off) t Fall time 210 f C Input Capacitance 6000 pF V = 0V ies GE C V = 30V Output Capacitance 190 oes CC C Reverse Transfer Capacitance 130 f = 1.0Mhz res I = 200A C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 5.0 , V = +20V to 0V, T =175C GE J Notes: V = 80% (V ), V = 20V, L = 200H, R = 5.0. CC CES GE G Pulse width 400s duty cycle 2%. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at 2 www.irf.com