IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C V = 1200V Low V Trench IGBT Technology CES CE (ON) Low Switching Losses I = 75A C(Nominal) Maximum Junction Temperature 175 C 10 S short Circuit SOA G t 10s, T =175C SC J(max) Square RBSOA 100% of The Parts Tested for I LM E V typ. = 2.0V Positive V Temperature Coefficient CE(on) CE (ON) n-channel Tight Parameter Distribution Lead Free Package C E Benefits C G High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Super-247 Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation GC E G ate Collector Em itter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C 220 C C Continuous Collector Current I T = 100C Continuous Collector Current 130 C C I A Nominal Current 75 NOMINAL I CM Pulse Collector Current, V =15V 225 GE I Clamped Inductive Load Current, V =20V 300 LM GE V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C D C Maximum Power Dissipation 1150 W P T = 100C Maximum Power Dissipation 580 D C T Operating Junction and -55 to +175 J T STG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.13 JC Thermal Resistance, Case-to-Sink (flat, greased surface) C/W R 0.24 CS R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 1 www.irf.com 9/8/10IRG7PSH73K10PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.58 V/C V = 0V, I = 5.0mA (25C-175C) (BR)CES J GE C 2.0 2.3 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.50 V I = 75A, V = 15V, T = 150C CE(on) C GE J 2.60 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.0 7.5 V V = V , I = 3.5mA GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 3.5mA (25C - 175C) GE(th) CE GE C gfe Forward Transconductance 53 S V = 50V, I = 75A, PW = 80s CE C I Collector-to-Emitter Leakage Current 1.0 25 V = 0V, V = 1200V, T = 25C CES GE CE J A 2340 V = 0V, V = 1200V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 400 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 360 540 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 87 130 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 180 270 V = 600V gc CC E Turn-On Switching Loss 7.7 8.7 I = 75A, V = 600V, V = 15V on C CC GE E Turn-Off Switching Loss 4.6 5.6 mJ R = 4.7, L = 200H, T = 25C off G J E Total Switching Loss 12.3 14.3 Energy losses include tail & diode reverse recovery total t Turn-On delay time 63 81 I = 75A, V = 600V, V = 15V d(on) C CC GE t Rise time 118 138 ns R = 4.7, L = 200H, T = 25C r G J t Turn-Off delay time 267 291 d(off) t Fall time 114 134 f E Turn-On Switching Loss 11 I = 75A, V = 600V, V =15V on C CC GE E Turn-Off Switching Loss 7.4 mJ R =4.7, L=200H, T = 175C off G J E Total Switching Loss 18.4 Energy losses include tail & diode reverse recovery total t Turn-On delay time 62 I = 75A, V = 600V, V =15V d(on) C CC GE t Rise time 110 ns R = 4.7, L = 200H r G t Turn-Off delay time 330 T = 175C d(off) J t Fall time 237 f C Input Capacitance 9450 pF V = 0V ies GE C Output Capacitance 340 V = 30V oes CC C Reverse Transfer Capacitance 230 f = 1.0Mhz res I = 300A C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 4.7, V = +20V to 0V, T =175C GE J SCSOA Short Circuit Safe Operating Area 10 sV = 600V, Vp =1200V ,T = 150C CC J Rg = 4.7, V = +15V to 0V GE Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. V = 80% (V ), V = 20V, L = 20H, R = 5.0. CC CES GE G Pulse width 400s duty cycle 2%. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com