IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 1200V CES C I = 8A, T =100C C C t 10s, T = 150C SC J(max) E C G E E C V typ. = 1.7V I = 5A G CE(ON) C C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Industrial Motor Drive UPS G C E Solar Inverters Gate Collector Emitter Welding Features Benefits Benchmark Low V High Efficiency in a Motor Drive Applications CE(ON) 10 s Short Circuit SOA Increases margin for short circuit protection scheme Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE(ON) Square RBSOA and high I rating Rugged Transient Performance LM- Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG8P08N120KDPbF TO-247AC Tube 25 IRG8P08N120KDPbF IRG8P08N120KD-EPbF TO-247AD Tube 25 IRG8P08N120KD-EPbF IRG8B08N120KDPbF TO-220AB Tube 50 IRG8B08N120KDPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C 15 C C Continuous Collector Current (Silicon Limited) I T = 100C Continuous Collector Current 8 C C I Pulse Collector Current (see fig. 2) 15 CM A I 20 Clamped Inductive Load Current (see fig. 3) LM I T = 25C Diode Continuous Forward Current 11 F C I T = 100C Diode Continuous Forward Current 6 F C V Continuous Gate-to-Emitter Voltage 30 V GE 20 I Diode Maximum Forward Current FM P T = 25C Maximum Power Dissipation 89 D C W P T = 100C Maximum Power Dissipation 36 D C T Operating Junction and -40 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB 1.3 JC Thermal Resistance Junction-to-Case-(each Diode) TO-220AB 2.6 R (Diode) JC R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 1.4 JC Thermal Resistance Junction-to-Case-(each Diode) TO-247 2.6 R (Diode) JC C/W R Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB 0.50 CS Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB 62 R JA R Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247 0.24 CS Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1mA (25C-150C) V /T GE C (BR)CES J 1.7 2.0 I = 5A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V CE(on) 2.1 I = 5A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 6.5 V V = V , I = 200A GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -14 mV/C V = V , I = 200A(25C-150C) CE GE C GE(th) J gfe Forward Transconductance 2.9 S V = 50V, I = 5A, PW = 20s CE C 1.0 35 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 1200V, T = 150C GE CE J Gate-to-Emitter Leakage Current I 100 nA V = 30V GES GE 2.3 2.7 I = 5A F V Diode Forward Voltage Drop V F 2.5 I = 5A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 30 45 I = 5A g C Q Gate-to-Emitter Charge (turn-on) 1.1 1.7 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 20 V = 600V gc CC E Turn-On Switching Loss 0.3 on E Turn-Off Switching Loss 0.3 mJ off I = 5A, V = 600V, V =15V C CC GE E Total Switching Loss 0.6 total R = 47 , T = 25C G J t Turn-On delay time 20 d(on) Energy losses include tail & diode t Rise time 20 r reverse recovery ns t Turn-Off delay time 160 d(off) t Fall time 240 f E Turn-On Switching Loss 0.5 on E Turn-Off Switching Loss 0.5 off mJ I = 5A, V = 600V, V =15V C CC GE E Total Switching Loss 1.0 total R = 47 , T = 150C G J t Turn-On delay time 20 d(on) Energy losses include tail & diode t Rise time 20 r reverse recovery ns t Turn-Off delay time 300 d(off) t Fall time 290 f C Input Capacitance 720 V = 0V ies GE pF V = 30V C Output Capacitance 30 oes CC C Reverse Transfer Capacitance 15 f = 1.0Mhz res T = 150C, I = 20A J C FULL SQUARE V = 960V, Vp 1200V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 240 J J V = 600V, I = 5A t Diode Reverse Recovery Time 50 ns CC F rr V = 15V, Rg = 47 I Peak Reverse Recovery Current 11 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback December 12, 2014