IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 1200V CES C I = 50A, T =100C C C E t 10s, T = 150C SC J(max) C G E G C G E V typ. = 1.7V IC = 35A CE(ON) IRG8P50N120KDPbF IRG8P50N120KDEPbF n-channel TO247AC TO247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Benchmark Low V High Efficiency in a Motor Drive Applications CE(ON) 10 s Short Circuit SOA Increases margin for short circuit protection scheme Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE(ON) Square RBSOA and high I rating Rugged Transient Performance LM- Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRG8P50N120KDPbF TO-247AC Tube 25 IRG8P50N120KDPbF IRG8P50N120KD-EPbF TO-247AD Tube 25 IRG8P50N120KD-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 80 C C I T = 100C Continuous Collector Current 50 C C I Pulse Collector Current (see fig. 2) 105 CM I Clamped Inductive Load Current (see fig. 3) 140 A LM I T = 25C Diode Continuous Forward Current 45 F C I T = 100C Diode Continuous Forward Current 25 F C I Diode Maximum Forward Current 140 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 350 D C W P T = 100C Maximum Power Dissipation 140 D C T Operating Junction and -40 to +150 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.36 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.83 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P50N120KDPbF/IRG8P50N120KD-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.93 V/C V = 0V, I = 2mA (25C-150C) V /T GE C (BR)CES J 1.7 2.0 V I = 35A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.0 I = 35A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 5.0 6.5 V V = V , I = 1.4mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -16 mV/C V = V , I = 1.4mA (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 20 S V = 50V, I = 35A, PW = 20s CE C 1 35 A V = 0V, V = 1200V GE CE I Collector-to-Emitter Leakage Current CES 1.2 mAV = 0V, V = 1200V, T = 150C GE CE J Gate-to-Emitter Leakage Current I 300 nA V = 30V GES GE 2.1 2.7 V I = 35A F V Diode Forward Voltage Drop F 2.4 I = 35A, T = 150C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 210 315 I = 35A g C Q Gate-to-Emitter Charge (turn-on) 10 15 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 135 205 V = 600V gc CC E Turn-On Switching Loss 2.3 on E Turn-Off Switching Loss 1.9 mJ off I = 35A, V = 600V, V =15V C CC GE E Total Switching Loss 4.2 total R = 5 , T = 25C G J t Turn-On delay time 35 d(on) Energy losses include tail & diode t Rise time 25 r ns reverse recovery t Turn-Off delay time 190 d(off) t Fall time 105 f E Turn-On Switching Loss 3.8 on E Turn-Off Switching Loss 3.9 off mJ I = 35A, V = 600V, V =15V C CC GE E Total Switching Loss 7.7 total R = 5 , T = 150C G J t Turn-On delay time 30 d(on) Energy losses include tail & diode t Rise time 25 r ns reverse recovery t Turn-Off delay time 270 d(off) t Fall time 140 f C Input Capacitance 3300 V = 0V ies GE pF V = 30V C Output Capacitance 200 oes CC f = 1.0Mhz C Reverse Transfer Capacitance 105 res T = 150C, I = 140A J C FULL SQUARE V = 960V, Vp 1200V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 600V, Vp 1200V J CC SCSOA Short Circuit Safe Operating Area 10 s V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 0.52 mJ J V = 600V, I = 35A t Diode Reverse Recovery Time 170 ns CC F rr V = 15V, Rg = 5 I Peak Reverse Recovery Current 22 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 30, 2014