IRGB10B60KDPbF IRGS10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KDPbF ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. I = 19A, T =100C C C 10s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. t > 10s, T =150C sc J Positive VCE (on) Temperature Coefficient. E Lead-Free V typ. = 1.8V CE(on) n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 TO-220AB D Pak TO-262 IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 35 C C I T = 100C Continuous Collector Current 19 C C I Pulsed Collector Current 44 CM I Clamped Inductive Load Current 44 A LM I T = 25C Diode Continuous Forward Current 35 F C I T = 100C Diode Continuous Forward Current 19 F C I Diode Maximum Forward Current 44 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 156 D C P T = 100C Maximum Power Dissipation 62 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.8 JC R Junction-to-Case - Diode 3.4 JC R Case-to-Sink, flat, greased surface 0.50 C/W CS R Junction-to-Ambient, typical socket mount 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA Wt Weight 1.44 g www.irf.com 1 01/07/13IRG/B/S/SL10B60KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 1.0mA, (25C-150C) (BR)CES J GE C 5, 6,7 V Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 I = 10A, V = 15V CE(on) C GE 9,10,11 2.20 2.50 V I = 10A, V = 15V T = 150C C GE J 9,10,11 V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 1.0mA, (25C-150C) 12 GE(th) J CE GE C g Forward Transconductance 7.0 S V = 50V, I = 10A, PW=80s fe CE C I Zero Gate Voltage Collector Current 3.0 150 AV = 0V, V = 600V CES GE CE 300 700 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.30 1.45 I = 10A FM C 8 1.30 1.45 V I = 10A T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 38 I = 10A C Qge Gate - Emitter Charge (turn-on) 4.3 nC V = 400V CT1 CC Qgc Gate - Collector Charge (turn-on) 16.3 V = 15V GE CT4 E Turn-On Switching Loss 140 247 JI = 10A, V = 400V on C CC E Turn-Off Switching Loss 250 360 V = 15V,R = 47, L = 200H off GE G E Total Switching Loss 390 607 Ls = 150nH T = 25C tot J t Turn-On Delay Time 30 39 I = 10A, V = 400V d(on) C CC t Rise Time 20 29 V = 15V, R = 47, L = 200H CT4 r GE G t Turn-Off Delay Time 230 262 ns Ls = 150nH, T = 25C d(off) J t Fall Time 23 32 f CT4 E Turn-On Switching Loss 230 340 I = 10A, V = 400V on C CC 13,15 E Turn-Off Switching Loss 350 464 JV = 15V,R = 47, L = 200H off GE G E Total Switching Loss 580 804 Ls = 150nH T = 150C WF1WF2 tot J t Turn-On Delay Time 30 39 I = 10A, V = 400V 14, 16 d(on) C CC t Rise Time 20 28 V = 15V, R = 47, L = 200H CT4 r GE G t Turn-Off Delay Time 250 274 ns Ls = 150nH, T = 150C WF1 d(off) J t Fall Time 26 34 WF2 f C Input Capacitance 620 V = 0V ies GE C Output Capacitance 62 pF V = 30V oes CC C Reverse Transfer Capacitance 22 f = 1.0MHz res 4 T = 150C, I = 44A, Vp =600V J C RBSOA Reverse Bias Safe Operting Area FULL SQUARE CT2 V = 500V, V = +15V to 0V,R = 47 CC GE G CT3 sT = 150C, Vp =600V,R = 47 J G SCSOA Short Circuit Safe Operting Area 10 WF4 V = 360V, V = +15V to 0V CC GE 17,18,19 Erec Reverse Recovery energy of the diode 245 330 JT = 150C J 20, 21 t Diode Reverse Recovery time 90 105 ns V = 400V, I = 10A, L = 200H rr CC F CT4,WF3 I Diode Peak Reverse Recovery Current 19 22 A V = 15V,R = 47, Ls = 150nH rr GE G Note to are on page 15 2 www.irf.com