IRGB4045DPbF WITH C ULTRAFAST SOFT RECOVERY DIODE Features = Low V Trench IGBT Technology CE (on) G Low Switching Losses Maximum Junction temperature 175 C 5s SCSOA E = Square RBSOA n-channel 100% of the parts tested for I LM Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode C Tighter Distribution of Parameters Lead-Free Package Benefits E High Efficiency in a Wide Range of Applications C G Suitable for a Wide Range of Switching Frequencies due to Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Units Max. V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 12 C C I T = 100C Continuous Collector Current 6.0 C C I Pulsed Collector Current, V = 15V 18 CM GE 24 I Clamped Inductive Load Current, V = 20V A LM GE I T =25C Diode Continuous Forward Current 8.0 F C 4.0 I T =100C Diode Continuous Forward Current F C Diode Maximum Forward Current 24 I FM 20 Continuous Gate-to-Emitter Voltage V V GE Transient Gate-to-Emitter Voltage 30 77 P T =25 Maximum Power Dissipation W D C 39 P T =100 Maximum Power Dissipation D C T Operating Junction and C J -55 to + 175 T Storage Temperature Range STG 300 (0.063 in. (1.6mm) from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case - IGBT R 1.94 JC Junction-to-Case - Diode R 6.30 JC C/W R Case-to-Sink, flat, greased surface 0.5 CS Junction-to-Ambient, typical socket mount R 62 JA 1 www.irf.com 01/28/2010IRGB4045DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V = 0V, I =100 A V Collector-to-Emitter Breakdown Voltage 600 V GE c (BR)CES CT6 o V = 0V, I = 250A ( 25 -175 C ) V / T Temperature Coeff. of Breakdown Voltage 0.36 V/C (BR)CES J GE c 1.7 2.0 I = 6.0A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.07 V I = 6.0A, V = 15V, T = 150C 5,6,7,9, CE(on) C GE J 2.14 I = 6.0A, V = 15V, T = 175C 10 ,11 C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 150A GE(th) CE GE C 9,10,11,12 o -13 V / TJ Threshold Voltage temp. coefficient mV/C V = V , I = 250A ( 25 -175 C ) CE GE C GE(th) gfe Forward Transconductance 5.8 S V = 25V, I = 6.0A, PW =80s CE C I 25 A V = 0V,V = 600V CES GE CE Collector-to-Emitter Leakage Current V = 0V, V = 600V, T =175C 250 GE CE J 8 V 1.60 2.30 V I = 6.0A FM F Diode Forward Voltage Drop 1.30 I = 6.0A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20 V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 13 19.5 I = 6.0A 24 g C Q Gate-to-Emitter Charge (turn-on) 3.1 4.65 nC V = 400V CT1 ge CC Q Gate-to-Collector Charge (turn-on) 6.4 9.6 V = 15V gc GE E = 6.0A, V = 400V, V = 15V Turn-On Switching Loss 56 86 I on C CC GE E Turn-Off Switching Loss 122 143 J R = 47 , L=1mH, L = 150nH, T = 25C CT4 off G S J E 178 229 Total Switching Loss Energy losses include tail and diode reverse recovery total t Turn-On delay time 27 35 I = 6.0A, V = 400V d(on) C CC t Rise time 11 15 ns R = 47 , L=1mH, L = 150nH CT4 r G S t Turn-Off delay time 75 93 T = 25C d(off) J t Fall time 17 22 f E Turn-On Switching Loss 140 I = 6.0A, V = 400V, V = 15V 13,15 on C CC GE E Turn-Off Switching Loss 189 J R = 47 , L=1mH, L = 150nH, T = 175C CT4 off G S J E 329 WF1,WF2 Total Switching Loss Energy losses include tail and diode reverse recovery total t Turn-On delay time 26 I = 6.0A, V = 400V 14,16 d(on) C CC t 12 R = 47 , L=1mH, L = 150nH Rise time ns CT4 r G S t Turn-Off delay time 95 T = 175C WF1,WF2 d(off) J t 32 Fall time f C Input Capacitance 350 V = 0V 23 ies GE C pF V = 30V Output Capacitance 29 oes CC C Reverse Transfer Capacitance 10 f = 1Mhz res T = 175C, I = 24A 4 J C V = 500V, Vp =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 CC R = 100 , V = +20V to 0V G GE V = 400V, Vp =600V 22, CT3 CC SCSOA Short Circuit Safe Operating Area 5 s R = 100 , V = +15V to 0V WF4 G GE o Erec Reverse recovery energy of the diode 178 J T = 175 C 17,18,19 J V = 400V, I = 6.0A Diode Reverse recovery time 74 ns trr CC F 20,21 V = 15V, Rg = 47 , L=1mH, L =150nH WF3 Irr Peak Reverse Recovery Current 12 A GE S Notes: V = 80% (V ), V = 15V, L = 1.0mH, R = 47. CC CES GE G Pulse width limited by max. junction temperature. 2 www.irf.com