IRGB4060DPbF WITH C ULTRAFAST SOFT RECOVERY DIODE Features = Low V Trench IGBT Technology CE (on) Low Switching Losses G Maximum Junction temperature 175 C 5s SCSOA E = Square RBSOA n-channel 100% of The Parts Tested for 4X Rated Current (I ) LM Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode C Tighter Distribution of Parameters Lead-Free Package Benefits High Efficiency in a Wide Range of Applications E C Suitable for a Wide Range of Switching Frequencies due G to Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 16 C C I T = 100C Continuous Collector Current 8 C C I Pulsed Collector Current 32 CM Clamped Inductive Load Current I 32 A LM I T =25C Diode Continuous Forward Current 16 F C I T =100C Diode Continuous Forward Current 8 F C Diode Maximum Forward Current I 32 FM Continuous Gate-to-Emitter Voltage 20 V V GE Transient Gate-to-Emitter Voltage 30 P T =25 Maximum Power Dissipation 99 W D C P T =100 Maximum Power Dissipation 50 D C T Operating Junction and C J -55 to + 175 T Storage Temperature Range STG 300 (0.063 in. (1.6mm) from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case - IGBT R 1.51 JC Junction-to-Case - Diode R 3.66 JC C/W R Case-to-Sink, flat, greased surface 0.5 CS Junction-to-Ambient, typical socket mount R 80 JA Wt Weight 1.44 g 1 www.irf.com 9/22/06IRGB4060DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V = 0V,I =100 A V Collector-to-Emitter Breakdown Voltage 600 V GE c (BR)CES CT6 o V = 0V, I = 250 A ( 25 -175 C ) V /T Temperature Coeff. of Breakdown Voltage 0.3 V/C (BR)CES J GE c 1.55 1.85 I = 8A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.00 V I = 8A, V = 15V, T = 150C 5,6,7,9, CE(on) C GE J 1.95 I = 8A, V = 15V, T = 175C 10 ,11 C GE J V V = V , I = 250 A Gate Threshold Voltage 4.0 6.5 V GE(th) CE GE C 9,10,11,12 o V /TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 250 A ( 25 -175 C ) GE(th) CE GE C V = 50V, I = 8A, PW =80s gfe Forward Transconductance 5.6 S CE C I V = 0V,V = 600V 1 25 A CES GE CE Collector-to-Emitter Leakage Current V = 0v, V = 600V, T =175C 400 A 8 GE CE J V I = 8A 1.80 2.80 V FM F Diode Forward Voltage Drop I = 8A, T = 175C 1.30 F J I V = 20 V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 19 29 I = 8A 24 g C Q Gate-to-Emitter Charge (turn-on) 5 7 nC V = 400V CT1 ge CC Q Gate-to-Collector Charge (turn-on) 8 12 V = 15V gc GE 115 E Turn-On Switching Loss 70 I = 8A, V = 400V, V = 15V on C CC GE 195 E Turn-Off Switching Loss 145 J R = 47, L=1mH, L = 150nH, T = 25C CT4 off G S J 215 310 E Total Switching Loss Energy losses include tail and diode reverse recovery total t Turn-On delay time 30 39 I = 8A, V = 400V d(on) C CC t Rise time 15 21 ns R = 47, L=1mH, L = 150nH CT4 r G S t Turn-Off delay time 95 106 T = 25C d(off) J t Fall time 20 26 f E Turn-On Switching Loss 165 I = 8A, V = 400V, V = 15V 13,15 on C CC GE E Turn-Off Switching Loss 240 J R = 47, L=1mH, L = 150nH, T = 175C CT4 off G S J E Total Switching Loss 405 Energy losses include tail and diode reverse recovery WF1,WF2 total t Turn-On delay time 28 I = 8A, V = 400V 14,16 d(on) C CC t Rise time 17 nsR = 47, L=1mH, L = 150nH CT4 r G S t Turn-Off delay time 117T = 175C WF1,WF2 d(off) J t Fall time 35 f C Input Capacitance 535 V = 0V 22 ies GE pF C Output Capacitance 45 V = 30V oes CC C Reverse Transfer Capacitance 15 f = 1Mhz res T = 175C, I = 32A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC R = 47, V = +15V to 0V G GE V = 400V, Vp =600V 22, CT3 CC SCSOA Short Circuit Safe Operating Area 5 s R = 47, V = +15V to 0V WF4 G GE o Erec Reverse recovery energy of the diode 165 J T = 175 C 17,18,19 J Diode Reverse recovery time 60 ns V = 400V, I = 8A trr 20,21 CC F Irr Peak Reverse Recovery Current 14 A V = 15V, Rg = 47, L=1mH, L =150nH WF3 GE S Notes: V = 80% (V ), V = 15V, L = 100 H, R = 47 . CC CES GE G Pulse width limited by max. junction temperature. 2 www.irf.com