IRGB6B60KPbF IRGS6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60KPbF C V = 600V CES Features Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. I = 7.0A, T =100C C C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Lead-Free. t > 10s, T =150C sc J E V typ. = 1.8V n-channel CE(on) Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 TO-220AB D Pak TO-262 IRGB6B60K IRGS6B60K IRGSL6B60K Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 13 A C C I T = 100C Continuous Collector Current 7.0 C C I Pulsed Collector Current 26 CM I Clamped Inductive Load Current 26 LM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 90 D C P T = 100C Maximum Power Dissipation 36 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 1.4 JC R Case-to-Sink, flat, greased surface 0.50 C/W CS R Junction-to-Ambient, typical socket mount 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA Wt Weight 1.44 g www.irf.com 1 11/18/04IRGB/S/SL6B60KPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 1.0mA, (25C-150C) (BR)CES J GE C 5, 6,7 V Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V I = 5.0A, V = 15V CE(on) C GE 8,9,10 2.20 2.50 I = 5.0A,V = 15V, T = 150C C GE J 8,9,10 V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 1.0mA, (25C-150C) 11 GE(th) J CE GE C g Forward Transconductance 3.0 S V = 50V, I = 5.0A, PW=80s fe CE C I Zero Gate Voltage Collector Current 1.0 150 A V = 0V, V = 600V CES GE CE 200 500 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 18.2 I = 5.0A 17 C Qge Gate - Emitter Charge (turn-on) 1.9 nC V = 400V CT1 CC Qgc Gate - Collector Charge (turn-on) 9.2 V = 15V GE CT4 E Turn-On Switching Loss 110 210 J I = 5.0A, V = 400V on C CC E Turn-Off Switching Loss 135 245 V = 15V,R = 100, L =1.4mH off GE G E Total Switching Loss 245 455 Ls = 150nH T = 25C tot J t Turn-On Delay Time 25 34 I = 5.0A, V = 400V CT4 d(on) C CC t Rise Time 17 26 V = 15V, R = 100 L =1.4mH r GE G t Turn-Off Delay Time 215 230 ns Ls = 150nH, T = 25C d(off) J t Fall Time 13.2 22 f CT4 E Turn-On Switching Loss 150 260 I = 5.0A, V = 400V on C CC 12,14 E Turn-Off Switching Loss 190 300 J V = 15V,R = 100, L =1.4mH off GE G WF1WF2 E Total Switching Loss 340 560 Ls = 150nH T = 150C tot J t Turn-On Delay Time 28 37 I = 5.0A, V = 400V 13, 15 d(on) C CC CT4 t Rise Time 17 26 V = 15V, R = 100 L =1.4mH r GE G t Turn-Off Delay Time 240 255 ns Ls = 150nH, T = 150C WF1 d(off) J t Fall Time 18 27 WF2 f C Input Capacitance 290 V = 0V ies GE C Output Capacitance 34 pF V = 30V 16 oes CC C Reverse Transfer Capacitance 10 f = 1.0MHz res 4 T = 150C, I = 26A, Vp =600V J C RBSOA Reverse Bias Safe Operting Area FULL SQUARE R = 100 CT2 V = 500V, V =+15V to 0V, G CC GE CT3 s T = 150C, Vp =600V, R = 100 J G SCSOA Short Circuit Safe Operting Area 10 WF3 V = 360V, V = +15V to 0V CC GE Note to are on page 13 2 www.irf.com