PD - 95645B IRGB8B60KPbF IRGS8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60KPbF C Features V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. I = 19A C Square RBSOA. Positive VCE (on) Temperature Coefficient. G t >10s, T =175C sc J Lead-Free. E V typ. = 1.8V n-channel CE(on) Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 TO-220AB D Pak TO-262 IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 28 C C Continuous Collector Current 19 I T = 100C C C I Nominal Current 8.0 A NOMINAL I Pulse Collector Current (Ref.Fig.C.T.5) 34 CM Clamped Inductive Load current I 34 LM V Gate-to-Emitter Voltage 20 V GE Maximum Power Dissipation 167 W P T = 25C D C P T = 100C Maximum Power Dissipation 83 D C T Operating Junction and -55 to +175 J Storage Temperature Range C T STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units Junction-to-Case- IGBT R 0.90 JC R Case-to-Sink, flat, greased surface 0.50 C/W CS Junction-to-Ambient, typical socket mount R 62 JA Junction-to-Ambient (PCB Mount, Steady State) R 40 JA Weight 1.44g www.irf.com 1 01/25/2010IRGB/S/SL8B60KPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V V = 0V, I = 500A Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE C V / T V = 0V, I = 1mA (25C-150C) (BR)CES J Temperature Coeff. of Breakdown Voltage 0.57 V/C GE C V Collector-to-Emitter Voltage 1.8 2.2 I = 8.0A, V = 15V, T = 25C 5,6,7 CE(on) C GE J 2.2 2.5 V I = 8.0A, V = 15V, T = 150C 8,9,10 C GE J I = 8.0A, V = 15V, T = 175C 2.3 2.6 C GE J V Gate Threshold Voltage 3.5 4.5 5.5 V = V , I = 250A 8,9,10, GE(th) CE GE C V / T Threshold Voltage temp. coefficient -9.5 mV/C V = V , I = 1mA (25C-125C) 11 GE(th) J CE GE C V = 50V, I = 8.0A, PW = 80s gfe Forward Transconductance 3.7 S CE C I Zero Gate Voltage Collector Current 1.0 150 V = 0V, V = 600V CES GE CE 200 500 A V = 0V, V = 600V, T = 150C GE CE J V = 0V, V = 600V, T = 175C 800 1320 GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 29 I = 8.0A 17 g C Q Gate-to-Emitter Charge (turn-on) 3.7 nC V = 480V CT1 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 14 gc GE E Turn-On Switching Loss 160 268 I = 8.0A, V = 400V CT4 on C CC E Turn-Off Switching Loss 160 268 J V = 15V, R = 50 , L = 1.1mH off GE G E T = 25C Total Switching Loss 320 433 tot J t Turn-On delay time 23 27 I = 8.0A, V = 400V d(on) C CC t Rise time 22 26 ns V = 15V, R = 50 , L = 1.1mH CT4 r GE G t T = 25C Turn-Off delay time 140 150 d(off) J t Fall time 32 42 f E Turn-On Switching Loss 220 330 I = 8.0A, V = 400V CT4 on C CC E V = 15V, R = 50 , L = 1.1mH Turn-Off Switching Loss 270 381 J 12,14 off GE G E Total Switching Loss 490 608 T = 150C WF1,WF2 tot J t Turn-On delay time 22 27 I = 8.0A, V = 400V 13,15 d(on) C CC t V = 15V, R = 50 , L = 1.1mH Rise time 21 25 ns CT4 r GE G t T = 150C WF1 Turn-Off delay time 180 198 d(off) J t Fall time 40 56 WF2 f C Input Capacitance 440 V = 0V ies GE C V = 30V Output Capacitance 38 pF 16 oes CC C Reverse Transfer Capacitance 16 f = 1.0MHz res RBSOA Reverse Bias Safe Operating Area FULL SQUARE T = 150C, I = 34A, Vp = 600V 4 J C V =500V,V = +15V to 0V,R = 50 CT2 CC GE G T = 150C, Vp = 600V, R = 100 CT3 J G SCSOA Short Circuit Safe Operating Area 10 s V =360V,V = +15V to 0V WF3 CC GE Notes to are on page 13. 2 www.irf.com