IRGI4086PbF Key Parameters Features V min Advanced Trench IGBT Technology 300 V CE Optimized for Sustain and Energy Recovery V typ. I = 25A 1.29 V CE(ON) C Circuits in PDP Applications I max T = 25C A RP C 230 TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for Improved Panel Efficiency High Repetitive Peak Current Capability C Lead Free Package G E n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Emitter Voltage V GE I T = 25C Continuous Collector Current, V 15V 25 C C GE I T = 100C Continuous Collector, V 15V 12 A C C GE I T = 25C Repetitive Peak Current 230 RP C P T = 25C 43 Power Dissipation D C W P T = 100C Power Dissipation 17 D C Linear Derating Factor 0.34 W/C T Operating Junction and -40 to + 150 J T Storage Temperature Range C STG 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.9 C/W JC www.irf.com 1 02/02/09 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 1 mA Collector-to-Emitter Breakdown Voltage 300 V CES GE CE Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.29 V/C CE CES J V = 15V, I = 12A 1.10 1.36 GE CE V = 15V, I = 25A 1.29 1.55 GE CE V = 15V, I = 40A 1.49 1.67 GE CE V Static Collector-to-Emitter Voltage V CE(on) V = 15V, I = 70A 1.90 2.10 GE CE V = 15V, I = 120A 2.57 2.96 GE CE V = 15V, I = 70A, T = 150C 2.27 GE CE J V = V , I = 500A V Gate Threshold Voltage 2.6 5.0 V CE GE CE GE(th) V /T Gate Threshold Voltage Coefficient -11 mV/C GE(th) J V = 300V, V = 0V I Collector-to-Emitter Leakage Current 2.0 25 A CE GE CES V = 300V, V = 0V, T = 100C 5.0 CE GE J V = 300V, V = 0V, T = 150C 100 CE GE J I V = 30V Gate-to-Emitter Forward Leakage 100 nA GES GE V = -30V Gate-to-Emitter Reverse Leakage -100 GE g V = 25V, I = 25A Forward Transconductance 29 S CE CE fe Q V = 200V, I = 25A, V = 15V Total Gate Charge 65 nC g CE C GE Q Gate-to-Collector Charge 22 gc t Turn-On delay time 36 I = 25A, V = 196V d(on) C CC t R = 10, L=200H, L = 200nH Rise time 31 ns r G S t Turn-Off delay time 112 T = 25C d(off) J t Fall time 65 f t I = 25A, V = 196V Turn-On delay time 30 d(on) C CC t R = 10, L=200H, L = 200nH Rise time 33 ns r G S t T = 150C Turn-Off delay time 145 d(off) J t Fall time 98 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.40F, V = 15V GE 1075 E Energy per Pulse J V = 240V, R = 5.1, T = 25C PULSE CC G J L = 220nH, C= 0.40F, V = 15V GE 1432 V = 240V, R = 5.1, T = 100C CC G J C V = 0V Input Capacitance 2250 iss GE V = 30V C Output Capacitance 110 pF oss CE C Reverse Transfer Capacitance 58 = 1.0MHz, See Fig.13 rss L Internal Collector Inductance 5.0 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 13 from package E and center of die contact Pulse width 400s duty cycle 2%. Half sine wave with duty cycle = 0.1, ton=2sec. R is measured at T of approximately 90C. J 2 www.irf.com