PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Features Low VCE (on) Non Punch Through IGBT Technology. I = 6.0A, T =90C Low Diode VF. C C 10s Short Circuit Capability. G Square RBSOA. t > 10s, T =175C sc J Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E Lead-Free. V typ. = 1.8V CE(on) n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES Continuous Collector Current 11 I T = 25C C C Continuous Collector Current 7.0 A I T = 100C C C I Pulse Collector Current (Ref.Fig.C.T.5) 22 CM Clamped Inductive Load current I 22 LM Diode Continuous Forward Current 9.0 I T = 25C F C I T = 100C Diode Continuous Forward Current 6.0 F C I Diode Maximum Forward Current 18 FM V RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V ISOL Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 38 W D C P T = 100C Maximum Power Dissipation 19 D C Operating Junction and -55 to +175 T J Storage Temperature Range C T STG Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 3.9 JC R Junction-to-Case- Diode 6.0 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 62 JA WtWeight 2.0g www.irf.com 1 05/25/04IRGIB6B60KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V V = 0V, I = 500A Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C V Collector-to-Emitter Voltage 1.50 1.80 2.20 V I = 5A, V = 15V, T = 25C 5,6,7 CE(on) C GE J 2.20 2.50 I = 5A, V = 15V, T = 150C C GE J 2.30 2.60 I = 5A, V = 15V, T = 175C 9,10,11 C GE J V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A 9,10,11 GE(th) CE GE C V /T Threshold Voltage temp. coefficient -10 mV/C V = V , I = 1mA (25C-150C) 12 GE(th) J CE GE C gfe Forward Transconductance 3.0 S V = 50V, I = 5.0A, PW = 80s CE C I Zero Gate Voltage Collector Current 1.0 150 A V = 0V, V = 600V CES GE CE 200 500 V = 0V, V = 600V, T = 150C GE CE J 720 1100 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.25 1.45 V I = 5.0A, V = 0V 8 FM F GE 1.20 1.40 I = 5.0A, V = 0V, T = 150C F GE J 1.15 1.35 I = 5.0A, V = 0V, T = 175C F GE J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 18.2 27.3 I = 5.0A 23 g C Q Gate-to-Emitter Charge (turn-on) 1.9 2.85 nC V = 400V CT1 ge CC Q Gate-to-Collector Charge (turn-on) 9.2 13.8 V = 15V gc GE E Turn-On Switching Loss 110 210 I = 5.0A, V = 400V CT4 on C CC E Turn-Off Switching Loss 135 245 J V = 15V, R = 100, L = 1.4mH off GE G E Total Switching Loss 245 455 Ls= 150nH, T = 25C tot J t Turn-On delay time 25 34 I = 5.0A, V = 400V d(on) C CC t Rise time 17 26 ns V = 15V, R = 100, L = 1.4mH CT4 r GE G t Turn-Off delay time 215 230 Ls= 150nH, T = 25C d(off) J t Fall time 13.2 22 f E Turn-On Switching Loss 150 260 I = 5.0A, V = 400V CT4 on C CC E Turn-Off Switching Loss 190 300 J V = 15V, R = 100, L = 1.4mH 13,15 off GE G E Total Switching Loss 340 560 Ls= 150nH, T = 150C WF1,WF2 tot J t Turn-On delay time 28 37 I = 5.0A, V = 400V 14,16 d(on) C CC t Rise time 17 26 ns V = 15V, R = 100, L = 1.4mH CT4 r GE G t Turn-Off delay time 240 255 Ls= 150nH, T = 150C WF1 d(off) J t WF2 f Fall time 18 27 L Internal Emitter Inductance 7.5 nH Measured 5 mm from package E C Input Capacitance 290 435 V = 0V ies GE C Output Capacitance 34 51 pF V = 30V 22 oes CC C res Reverse Transfer Capacitance 10 15 f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T = 150C, I = 18A, Vp = 600V 4 J C V =500V,V = +15V to 0V,R = 100 CT2 CC GE G SCSOA Short Circuit Safe Operating Area 10 s T = 150C, Vp = 600V, R = 100 CT3 J G V =360V,V = +15V to 0V WF4 CC GE I Peak Short Circuit Collector Current 50 A WF4 SC (PEAK) E Reverse Recovery Energy of the Diode 90 175 J T = 150C 17,18,19 rec J t Diode Reverse Recovery Time 70 91 ns V = 400V, I = 5.0A, L = 1.4mH 20,21 rr CC F I V = 15V, R = 100, Ls= 150nH CT4,WF3 rr Peak Reverse Recovery Current 10 13 A GE G Q Diode Reverse Recovery Charge 350 455 nC di/dt = 400A/s rr Vcc =80% (V ), V = 20V, L =100H, R = 50. CES GE G Energy losses includetai and diode reverse recovery. 2 www.irf.com