PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE V = 600V CES Features Low VCE (on) Non Punch Through IGBT Technology. I = 8.0A, T =100C C C 10s Short Circuit Capability. G Square RBSOA. t > 10s, T =150C sc J Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. V typ. = 1.8V CE(on) n-channel Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB FullPak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES Continuous Collector Current 12 I T = 25C C C I T = 100C Continuous Collector Current 8.0 A C C I Pulse Collector Current (Ref.Fig.C.T.5) 24 CM Clamped Inductive Load current 24 I LM I T = 25C Diode Continuous Forward Current 9.0 F C Diode Continuous Forward Current 6.0 I T = 100C F C I Diode Maximum Forward Current 18 FM V RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V ISOL Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 39 W D C P T = 100C Maximum Power Dissipation 20 D C Operating Junction and -55 to +175 T J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 3.8 JC R Junction-to-Case- Diode 6.0 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 62 JA Weight 2.0g Wt www.irf.com 1 04/27/04IRGIB7B60KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V V = 0V, I = 500A Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.57 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C 1.8 2.2 I = 8.0A, V = 15V, T = 25C 5,6,7 C GE J V I = 8.0A, V = 15V, T = 150C Collector-to-Emitter Voltage 2.2 2.5 V 9,10,11 CE(on) C GE J 2.3 2.5 I = 8.0A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A 9,10,11 GE(th) CE GE C V /T V = V , I = 1mA (25C-150C) 12 Threshold Voltage temp. coefficient -9.5 mV/C GE(th) J CE GE C gfe Forward Transconductance 3.7 S V = 50V, I = 8.0A, PW = 80s CE C 1.0 150 V = 0V, V = 600V GE CE I V = 0V, V = 600V, T = 150C Zero Gate Voltage Collector Current 200 500 A CES GE CE J 720 1100 V = 0V, V = 600V, T = 175C GE CE J V I = 5.0A, V = 0V Diode Forward Voltage Drop 1.25 1.45 V 8 FM F GE 1.20 1.40 I = 5.0A, T = 150C, V = 0V F J GE 1.20 1.30 I = 5.0A, T = 175C, V = 0V F J GE I V = 20V, V = 0V Gate-to-Emitter Leakage Current 100 nA GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q I = 8.0A Total Gate Charge (turn-on) 29 44 23 g C Q Gate-to-Emitter Charge (turn-on) 3.7 5.6 nC V = 400V CT1 ge CC Q V = 15V Gate-to-Collector Charge (turn-on) 14 21 gc GE E Turn-On Switching Loss 160 268 I = 8.0A, V = 400V CT4 on C CC E Turn-Off Switching Loss 160 268 J V = 15V, R = 50, L = 1.1mH off GE G E Total Switching Loss 320 433 T = 25C tot J t I = 8.0A, V = 400V Turn-On delay time 23 27 d(on) C CC t Rise time 22 26 ns V = 15V, R = 50, L = 1.1mH CT4 r GE G t T = 25C Turn-Off delay time 140 150 d(off) J t Fall time 32 42 f E Turn-On Switching Loss 220 330 I = 8.0A, V = 400V CT4 on C CC E V = 15V, R = 50, L = 1.1mH Turn-Off Switching Loss 270 381 J 13,15 off GE G E Total Switching Loss 490 711 T = 150C WF1,WF2 tot J t Turn-On delay time 22 27 I = 8.0A, V = 400V 14,16 d(on) C CC t V = 15V, R = 50, L = 1.1mH Rise time 21 25 ns CT4 r GE G t Turn-Off delay time 180 198 T = 150C WF1 d(off) J t Fall time 40 56 WF2 f L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 440 660 V = 0V ies GE C V = 30V Output Capacitance 38 57 pF 22 oes CC C Reverse Transfer Capacitance 16 24 f = 1.0MHz res RBSOA Reverse Bias Safe Operating Area FULL SQUARE T = 150C, I = 54A, Vp = 600V 4 J C V =500V,V = +15V to 0V,R = 50 CT2 CC GE G SCSOA Short Circuit Safe Operating Area 10 s T = 150C, Vp = 600V, R = 100 CT3 J G V =360V,V = +15V to 0V WF4 CC GE I (Peak) WF4 Peak Short Circuit Collector Current 70 A SC E Reverse Recovery Energy of the Diode 100 133 J T = 150C 17,18,19 rec J t Diode Reverse Recovery Time 95 120 ns V = 400V, I = 8.0A, L = 1.07mH 20,21 rr CC F I V = 15V, R = 50 Peak Reverse Recovery Current 13 17 A CT4,WF3 rr GE G Q Diode Reverse Recovery Charge 620 800 nC di/dt = 500A/S rr Note to are on page 12 2 www.irf.com