PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features V = 1200V CES UltraFast Non Punch Through (NPT) Technology V = 3.05V CE(on) typ. Low Diode V (1.67V Typical 20A & 25C) F 10 s Short Circuit Capability G Square RBSOA V = 15V, I = 20A, 25C GE C UltraSoft Diode Recovery Characteristics E Positive V Temperature Coefficient CE(on) N-channel Extended Lead TO-247AD Package Benefits Benchmark Efficiency Above 20KHz Optimized for Welding, UPS, and Induction Heating Applications Rugged with UltraFast Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer Leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current (Fig.1) 40 C C I T = 100C Continuous Collector Current (Fig.1) 20 C C I Pulsed Collector Current (Fig.3, Fig. CT.5) 120 CM I Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A LM I T = 100C Diode Continuous Forward Current 20 F C I Diode Maximum Forward Current 120 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation (Fig.2) 300 D C W P T = 100C Maximum Power Dissipation (Fig.2) 120 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.42 JC R Junction-to-Case - Diode 0.83 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA W Weight 6 (0.21) g (oz) t Z Transient Thermal Impedance Junction-to-Case (Fig.24) JC www.irf.com 1 12/14/99IRGP20B120UD-E Electrical Characteristics TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V,I =250 A (BR)CES GE c o V / Tj Temperature Coeff. of Breakdown Voltage (B R)CE S +1.2 V/C V = 0V, I = 1 m A ( 25 -125 C ) GE c I = 20A, V = 15V 5, 6 3.05 3.45 C GE Collector-to-Emitter Saturation 7, 9 3.37 3.80 IC = 25A, V GE = 15V 10 VCE(on) Voltage 4.23 4.85 V IC = 40A, V GE = 15V 11 3.89 4.50 I = 20A, V = 15V, T = 125C C GE J I = 25A, V = 15V, T = 125C 4.31 5.06 C GE J V Gate Threshold Voltage V = V , I = 250 A 9,10,11,12 GE(th) 4.0 5.0 6.0 V CE GE C o o V / Tj Temperature Coeff. of Threshold Voltage GE(th) - 1.2 mV/ C VCE = VGE, IC = 1 m A (25 -125 C ) g fe Forward Transconductance 13.6 15.7 17.8 S V CE = 50V, IC = 20A, PW =80s 250 V = 0V, V = 1200V GE CE I Zero Gate Voltage Collector Current 420 750 A V = 0V, V = 1200V, T =125C CES GE CE J V = 0V, V = 1200V, T =150C 1482 2200 GE CE J I = 20A 1.67 1.96 C Diode Forward Voltage Drop 8 V FM 1.76 2.06 V IC = 25A 1.73 2.03 IC = 20A, T J = 125C 1.87 2.18 I = 25A, T = 125C C J I Gate-to-Emitter Leakage Current V = 20V GES 100 nA GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Fig. Total Gate charge (turn-on) 23 Q g 169 254 IC = 20A CT 1 Q Gate - Emitter Charge (turn-on) 24 36 nC V = 600V g e CC Q Gate - Collector Charge (turn-on) 82 126 V = 15V g c GE E Turn-On Switching Loss I = 20A, V = 600V CT 4 on 850 1050 C CC , Turn-Off Switching Loss WF 1 E off 425 650 J V GE = 15V, R g = 5 L = 200H o T = 25 C, Energy losses include tail J E Total Switching Loss WF 2 tot 1275 1800 and diode reverse recovery Turn-on Switching Loss 13, 15 E on 1350 1550 Ic = 20A, VCC = 600V Turn-off Switching Loss , CT 4 E off 610 875 J V = 15V, R g = 5 L = 200H GE o T = 125 C, Energy losses include tail J WF1 & 2 E tot Total Switching Loss 1960 2425 and diode reverse recovery 14, 16 td(on) Turn - on delay time 50 65 Ic = 20A, VCC = 600V , CT 4 tr Rise time 20 30 ns V = 15V, R g = 5 GE L = 200H o WF 1 td(off) Turn - off delay time 204 230 T = 125 C J tf Fall time WF 2 24 35 Input Capacitance C ies 2200 VGE = 0V Output Capacitance 22 C oes 210 pF V CC = 30V C Reverse Transfer Capacitance 85 f = 1.0 M H z res o 4 T = 150 C , Ic = 120A J CT 2 R BSO A Reverse bias safe operating area V = 1000V, V = 1200V FULL SQUARE CC P Rg = 5 , VGE = +15V to 0V o CT 3 T J = 150 C WF 4 SC SO A Short Circuit Safe Operating Area 10 ---- ---- s V CC = 900V, V P = 1200V Rg = 5 , V = +15V to 0V GE o 17,18,19 E Reverse recovery energy of the diode rec 1600 2100 J T = 125 C J 20, 21 trr Diode Reverse recovery time V = 600V, Ic = 20A 300 ns CC , Irr Peak Reverse Recovery Current CT 4, WF3 32 36 A VGE = 15V, R g = 5 L = 200H Internal Emitter Inductance Measured 5 mm from the package. Le 13 nH 2 www.irf.com