IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features V = 1200V Low V (on) Non Punch Through (NPT) CES CE Technology Low Diode V (1.76V Typical 25A & 25C) F V = 2.28V CE(on) typ. 10 s Short Circuit Capability G Square RBSOA V = 15V, I = 25A, 25C GE C Ultrasoft Diode Recovery Characteristics E Positive V (on) Temperature Coefficient CE N-channel Extended Lead TO-247AD Package Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current (Fig.1) 60 C C I T = 100C Continuous Collector Current (Fig.1) 30 C C I Pulsed Collector Current (Fig.3, Fig. CT.5) 120 CM I Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A LM I T = 100C Diode Continuous Forward Current 30 F C I Diode Maximum Forward Current 120 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation (Fig.2) 300 D C P T = 100C Maximum Power Dissipation (Fig.2) 120 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.42 JC R Junction-to-Case - Diode 0.83 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA W Weight 6 (0.21) g (oz) t Z Transient Thermal Impedance Junction-to-Case (Fig.24) JC www.irf.com 1 IRGP30B120KD-E Electrical Characteristics TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. V Collector-to-Emitter Breakdown Voltage V = 0V,I =250 A 1200 V (BR)CES GE c o V / Tj Temperature Coeff. of Breakdown Voltage (BR)CES +1.2 V/C V = 0V, I = 1 mA ( 25 -125 C ) GE c I = 25A, V = 15V 5, 6 2.28 2.48 C GE I = 30A, V = 15V 7, 9 Collector-to-Emitter Saturation 2.46 2.66 C GE 10 V Voltage 3.43 4.00 V I = 60A, V = 15V CE(on) C GE I = 25A, V = 15V, T = 125C 11 2.74 3.10 C GE J I = 30A, V = 15V, T = 125C 2.98 3.35 C GE J V Gate Threshold Voltage V = V , I = 250 A 9,10,11,12 4.0 5.0 6.0 V GE(th) CE GE C o o V / Tj GE(th) Temperature Coeff. of Threshold Voltage - 1.2 mV/ C V = V , I = 1 mA ( 25 -125 C ) CE GE C g Forward Transconductance 14.8 16.9 19.0 S V = 50V, I = 25A, PW=80 s fe CE C 250 V = 0V,V = 1200V GE CE I Zero Gate Voltage Collector Current 325 675 A V = 0v, V = 1200V, T =125C CES GE CE J V = 0v, V = 1200V, T =150C 2000 GE CE J I = 25A 1.76 2.06 C V I = 30A 8 Diode Forward Voltage Drop 1.86 2.17 V FM C 1.87 2.18 I = 25A, T = 125C C J 2.01 2.40 I = 30A, T = 125C C J I Gate-to-Emitter Leakage Current V = 20V 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Fig. 23 Q Total Gate charge (turn-on) 169 254 I = 25A g C Q Gate - Emitter Charge (turn-on) 19 29 nC V =600V CT 1 ge CC Q Gate - Collector Charge (turn-on) V = 15V 82 123 gc GE E Turn-On Switching Loss I = 25A, V = 600V CT 4 1066 1250 on C CC E WF1 Turn-Off Switching Loss 1493 1800 J V = 15V, Rg = 5, L=200 H off GE o T = 25 C, Energy losses include tail J E WF2 Total Switching Loss 2559 3050 tot and diode reverse recovery E Turn-on Switching Loss Ic =25A, V =600V 13, 15 1660 1856 on CC E CT 4 Turn-off Switching Loss 2118 2580 J V = 15V, Rg = 5, L=200 H off GE o T = 125 C, Energy losses include tail J E WF1 & 2 Total Switching Loss 3778 4436 tot and diode reverse recovery 14, 16 td(on) Turn - on delay time 50 65 Ic =25A, V =600V CC tr Rise time 25 35 ns V = 15V, Rg = 5, CT 4 L=200 H GE o td(off) Turn - off delay time 210 230 WF1 T = 125 C, J tf Fall time WF2 60 75 C Input Capacitance V = 0V 2200 ies GE C V = 30V 22 Output Capacitance 210 pF oes CC C Reverse Transfer Capacitance 85 f = 1.0 MHz res o 4 T =150 C, Ic = 120A J RBSOA Reverse bias safe operating area V = 1000V, V = 1200V CT 2 FULL SQUARE CC P Rg = 5 , V = +15V to 0 V GE o CT 3 T = 150 C J V = 900V,V = 1200V WF4 SCSOA Short Circuit Safe Operating Area 10 ---- ---- s CC P Rg = 5 , V = +15V to 0 V GE o E Reverse recovery energy of the diode 1820 2400 J 17,18,19 rec T = 125 C J trr Diode Reverse recovery time V = 600V, Ic = 25A 20, 21 300 ns CC Peak Reverse Recovery Current V = 15V, Rg = 5, CT 4, WF3 Irr 34 38 A L=200 H GE Le Internal Emitter Inductance 13 nH Measured 5 mm from the package. 2 www.irf.com