IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C V = 600V CES Low V Non Punch Through IGBT Technology. CE (on) Low Diode V . F 10s Short Circuit Capability. I = 30A, T =100C C C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. G t > 10s, T =150C Positive V Temperature Coefficient. sc J CE (on) TO-247AD Package E Lead-Free V typ. = 1.95V n-channel CE(on) Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-247AD Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 30 C C I Pulsed Collector Current 120 CM I Clamped Inductive Load Current 120 A LM I T = 25C Diode Continuous Forward Current 60 F C I T = 100C Diode Continuous Forward Current 30 F C I Diode Maximum Forward Current 120 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 304 D C P T = 100C Maximum Power Dissipation 122 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf in (1.1N m) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.41 JC R Junction-to-Case - Diode 1.32 JC C/W R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6.0 g www.irf.com 1 02/27/06IRGP30B60KD-EP Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.4 V/C V = 0V, I = 1.0mA, (25C-150C) (BR)CES J GE C 5, 6,7 V Collector-to-Emitter Saturation Voltage 1.95 2.35 V I = 30A, V = 15V CE(on) C GE 9, 10,11 2.40 2.75 I = 30A,V = 15V, T = 150C C GE J 9,10,11 V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 1.0mA, (25C-150C) 12 GE(th) J CE GE C g Forward Transconductance 18 S V = 50V, I = 50A, PW=80s fe CE C I Zero Gate Voltage Collector Current 5.0 250 A V = 0V, V = 600V CES GE CE 1000 2000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.30 1.55 V I = 30A FM F 8 1.25 1.50 I = 30A T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions 23 Qg Total Gate Charge (turn-on) 102 153 I = 30A C Qge Gate - Emitter Charge (turn-on) 14 21 nC V = 400V CT.1 CC Qgc Gate - Collector Charge (turn-on) 44 66 V = 15V GE E Turn-On Switching Loss 350 620 J I = 30A, V = 400V on C CC E Turn-Off Switching Loss 825 955 V =15V, R = 10, L=200H, CT.4 off GE G E Total Switching Loss 1175 1575 L = 150nH T = 25C tot S J t Turn-On Delay Time 46 60 I = 30A, V = 400V d(on) C CC t Rise Time 28 39 V = 15V, R = 10 L =200H CT.4 r GE G t Turn-Off Delay Time 185 200 ns L = 150nH, T = 25C d(off) S J t Fall Time 31 40 f CT.4 E Turn-On Switching Loss 635 1085 I = 30A, V = 400V on C CC 13,15 E Turn-Off Switching Loss 1150 1350 J V = 15V,R = 10, L =200H off GE G WF1,WF2 E Total Switching Loss 1785 2435 L = 150nH T = 150C tot S J CT.4 t Turn-On Delay Time 46 60 I = 30A, V = 400V d(on) C CC t Rise Time 28 39 V = 15V, R = 10 L =200H 14, 16 r GE G t Turn-Off Delay Time 205 235 ns L = 150nH, T = 150C WF1,WF2 d(off) S J t Fall Time 32 42 f C Input Capacitance 1750 V = 0V ies GE 22 C Output Capacitance 160 pF V = 30V oes CC C Reverse Transfer Capacitance 60 f = 1.0MHz res 4 T = 150C, I = 120A, Vp =600V J C RBSOA Reverse Bias Safe Operting Area FULL SQUARE CT.2 R =10 V = 500V, V = +15V to 0V, G CC GE CT.3 T = 150C, Vp =600V, R = 10 J G s SCSOA Short Circuit Safe Operting Area 10 WF.4 V = 360V, V = +15V to 0V CC GE 17,18,19 Erec Reverse Recovery energy of the diode 925 1165 J T = 150C J 20,21 t Diode Reverse Recovery time 125 ns V = 400V, I = 30A, L = 200H rr CC F CT.4,WF.3 I Diode Peak Reverse Recovery Current 43 48 A V = 15V,R = 10, L = 150nH rr GE G S Notes: V = 80% (V ), V = 15V, L = 28H, R = 22. Energy losses includetai and diode reverse recovery. CC CES GE G 2 www.irf.com