INSULATED GATE BIPOLAR TRANSISTOR Features C Low V Trench IGBT Technology CE (ON) V = 600V CES Low switching losses Maximum Junction temperature 175 C I = 24A, T = 100C C C 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of the parts tested for I LM Positive V Temperature co-efficient E CE (ON) V typ. = 1.65V CE(on) Tight parameter distribution n-channel Lead Free Package C Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to E C Low V and Low Switching losses CE (ON) G Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation TO-247AD Low EMI G C E Gate Collector Emitter Standard Pack Base part number Package Type Orderable part number Form Quantity IRGP4062-EPbF TO-247AD Tube 25 IRGP4062-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 48 C C I T = 100C Continuous Collector Current 24 C C I Pulse Collector Current, V = 15V 72 CM GE I LM Clamped Inductive Load Current, V = 20V 96 A GE V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 250 W D C P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Thermal Resistance Junction-to-Case 0.65 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V 600 V V = 0V, I = 100A (BR)CES Collector-to-Emitter Breakdown Voltage GE C V /T (BR)CE S J 0.30 V/CV = 0V, I = 1mA (25C-175C) T emperature Coeff. of B reakdown Voltage GE C 1.60 1.95 I = 24A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.03 V I = 24A, V = 15V, T = 150C CE(on) C GE J 2.04 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700A GE(th) CE GE C VGE (th)/ TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 1.0mA (25C - 175C) CE GE C gfe Forward Transconductance 17 S V = 50V, I = 24A, PW = 80s CE C I Collector-to-Emitter Leakage Current 2.0 25 AV = 0V, V = 600V CES GE CE 775 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 50 75 IC = 24A Q Gate-to-Emitter Charge (turn-on) 13 20 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 21 31 V = 400V gc CC Turn-On Switching Loss E 115 201 I = 24A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 600 700 JR = 10 , L = 200H, L = 150nH, T = 25C off G S J E Total Switching Loss 715 901 E nergy los s es include tail & diode revers e recovery total t Turn-On delay time 41 53 I = 24A, V = 400V, V = 15V d(on) C CC GE t Rise time 22 31 ns R = 10, L = 200H, L = 150nH, T = 25C r G S J t Turn-Off delay time 104 115 d(off) t Fall time 29 41 f Turn-On Switching Loss E 420 I = 24A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 840 JR =10, L= 200H, L =150nH, T = 175C off G S J E nergy los s es include tail & diode revers e recovery E Total Switching Loss 1260 total t Turn-On delay time 40 I = 24A, V = 400V, V = 15V d(on) C CC GE t Rise time 24 ns R = 10, L = 200H, L = 150nH r G S t Turn-Off delay time 125 T = 175C d(off) J t Fall time 39 f C Input Capacitance 1490 pF V = 0V ies GE C Output Capacitance 129 V = 30V oes CC C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 175C, I = 96A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 sV = 400V, Vp =600V CC Rg = 10, V = +15V to 0V GE Notes: V = 80% (V ), V = 20V, L = 100H, R = 10 CC CES GE G Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Turn-on energy is measured using the same co-pak diode as IRGP4062DPbF.